Preparation method of flexible pressure sensor with pressure-sensitive structure

Abstract

The invention discloses a preparation method of a flexible pressure sensor with a pressure-sensitive structure, and the method comprises the steps: S1, preparing a silicon wafer substrate, and depositing an insulating dielectric layer or a metal layer on the surface of the silicon wafer substrate, so as to form a masking layer; S2, patterning the masking layer in a photoetching mode to form a pressure-sensitive structure pattern, corroding and etching the silicon wafer substrate, and removing the masking layer on the surface through wet etching; S3, performing hydrophobization treatment on thesurface of the silicon wafer substrate, then filling the groove structure with a pressure-sensitive material, and performing curing; S4, separating the pressure-sensitive material from the silicon wafer substrate, and forming a metal layer on the surface of the pressure-sensitive material to obtain a pressure-sensitive sparse layer; and S5, combining one pressure-sensitive sparse layer / or a plurality of pressure-sensitive sparse layers / or combining at least one pressure-sensitive sparse layer with at least one pressure-sensitive dense layer and then connecting with the sensor electrode to obtain the flexible pressure sensor which has good flexibility and large deformation, the sensitivity is improved by more than two times, and the method can be used in a complex environment without influencing the detection performance.

Description

technical field [0001] The invention belongs to the technical field of pressure sensors, and in particular relates to a preparation method of a flexible pressure sensor with a pressure-sensitive structure. Background technique [0002] In recent years, piezoresistive pressure sensors are made using the piezoresistive effect of semiconductor materials. The so-called "piezoresistive effect" refers to the sensing materials such as semiconductors, metals or composite materials under external stress (bending, compression, stretching, etc.) Under the influence of the sensor, the energy band structure or the conductive network changes, which causes the resistivity of the sensing material to change. Therefore, the pressure sensor can be measured through the change of the resistance value. [0003] Traditional rigid sensors are based on silicon-based materials and structures, and have the characteristics of small size and high sensitivity. However, this type of sensor is hard and non...

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Problems solved by technology

[0005] The present invention aims to provide a method for preparing a flexible pressure sensor with a pressure-sensitive structure. The method prepares a flexible piezoresistive pressure sensor with good flexibility, high sensitivity and good responsiveness, which solves the problems of uniformity, problems of poor consistency and low precision,

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