Chemical mechanical polishing load monitoring method for groove filling structure
A chemical-mechanical, grinding-loaded technology, applied in the manufacture of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve the problems of high cost, long time, scrap Wafer, etc.
Pending Publication Date: 2021-03-02
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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Problems solved by technology
[0006] Using FIB and TEM to characterize and analyze has the following disadvantages: (1) takes a long time; (2) scraps Wafer; (3) is very expensive
Method used
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Embodiment Construction
[0042] Such as figure 1 Shown is a flow chart of the chemical mechanical grinding load monitoring method for the groove filling structure of the embodiment of the present invention; the chemical mechanical grinding load monitoring method for the groove filling structure of the embodiment of the present invention includes the following steps:
[0043] Step 1: Etching grooves on the wafer, measuring the critical dimensions at different depths of the grooves and obtaining the relationship between the depth of the grooves and the critical dimensions.
[0044] In an embodiment of the present invention, the wafer is composed of a semiconductor substrate. The semiconductor substrate includes a silicon substrate.
[0045] In an embodiment of the present invention, the groove is an opening of a through hole, and the groove filling structure is a through hole. In other embodiments, it can also be that: the groove is a groove, and the groove filling structure is a metal connection line...
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The invention discloses a chemical mechanical polishing load monitoring method for a groove filling structure. The chemical mechanical polishing load monitoring method comprises the following steps of: step 1, etching a wafer to form grooves, measuring critical dimensions of the grooves at different depths, and acquiring a relationship between the depth of the grooves and the critical dimensions;step 2, filling the grooves with a first film layer; step 3, carrying out chemical mechanical grinding to remove the first film layers outside the grooves, and forming groove filling structures composed of the first film layers filled in the grooves; and step 4, measuring the critical dimension of the groove filling structures, acquiring the height of the groove filling structures in combination with the relationship between the depth of the grooves and the critical dimension, and acquiring the corresponding chemical mechanical polishing load. According to the chemical mechanical polishing load monitoring method, the chemical mechanical polishing load of the groove filling structures can be rapidly detected in a nondestructive mode, calculation automation can be achieved, the detection efficiency can be improved, and the cost can be reduced.
Description
technical field [0001] The invention relates to the manufacturing field of semiconductor integrated circuits, in particular to a chemical mechanical polishing (CMP) loading monitoring method for groove filling structures. Background technique [0002] Chemical mechanical polishing technology is a means to obtain global planarization in integrated circuit manufacturing. This process is designed to obtain a surface that is both flat and free of scratches and impurities. [0003] Due to the anisotropy of chemical corrosion during the CMP process, it is often not possible to obtain a completely flat surface. It will cause the accompanying effects of tungsten chemical mechanical polishing in the middle stage (MEOL) of the integrated circuit manufacturing process: dishing and erosion. In addition, due to the difference in pattern density in different regions during the process, the remaining thickness of different regions of chemical mechanical polishing is different, that is, th...
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IPC IPC(8): H01L21/66H01L21/768
CPCH01L22/12H01L21/7684H01L2221/1068
Inventor 徐文胜叶炅翰苏炳熏
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD