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Nickel oxide electrochromic film and preparation method and application thereof

An electrochromic and electrochromic device technology, applied in chemical instruments and methods, nickel compounds, inorganic chemistry, etc., can solve problems such as unfavorable applications, difficult film deposition, low faded state transmittance, etc. The effect of over-rate and optical modulation amplitude, improving electrochromic response speed, and fast fading response time

Active Publication Date: 2021-03-09
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for the existing nickel oxide films deposited by magnetron sputtering on electrochromic devices, there are still the following shortcomings: poor optical modulation amplitude, insufficient ion storage capacity, slow response time, low Transmittance in faded state and brown-yellow faded state are not conducive to commercial applications, etc.
However, reactive sputtering of nickel oxide targets still faces the following problems for the uniform and rapid deposition of large-area films in the industry: (1) The performance of the film is heavily dependent on the oxygen content, and the slight change or fluctuation of oxygen in the sputtering chamber, It will seriously affect the electrochromic properties and large-area uniformity of the film; (2) Sputtering in a high-oxygen atmosphere will easily "poison" the target surface, and it is difficult to increase the sputtering voltage and power, and the sputtering rate will also drop. More serious, it is difficult to achieve efficient thin film deposition

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  • Nickel oxide electrochromic film and preparation method and application thereof
  • Nickel oxide electrochromic film and preparation method and application thereof
  • Nickel oxide electrochromic film and preparation method and application thereof

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preparation example Construction

[0038] As an aspect of the technical solution of the present invention, it relates to a method for preparing a nickel oxide electrochromic film, which includes:

[0039] Using magnetron sputtering technology to co-dope nickel oxide M x T y Ni z O is a cathode target material, and an inert gas is used as a working gas to deposit a nickel oxide film on the surface of the substrate, wherein the first doping element M includes at least one of lithium, sodium, potassium, rubidium, and cesium, and the second doping element The element S includes at least one of aluminum, silicon, and zirconium, x:y:z=(0.1~1):(0.01~0.5):1; and,

[0040] The obtained nickel oxide thin film is annealed to obtain the nickel oxide electrochromic thin film.

[0041] In some preferred embodiments, the process conditions adopted by the magnetron sputtering technology include: the sputtering method is radio frequency sputtering or intermediate frequency sputtering, the working gas is an inert gas, the sub...

Embodiment 1

[0072] The preparation method of nickel oxide electrochromic thin film in the present embodiment specifically comprises the following steps:

[0073] Step 1. Magnetron sputtering deposition of nickel oxide film

[0074] The co-doped nickel oxide target M x T y Ni z O is placed in the magnetron sputtering coating equipment, and nickel oxide film is deposited on the ITO transparent conductive glass substrate, wherein, M is lithium, T is silicon, x:y:z=0.5:0.2:1, during the sputtering process The main parameters of are as follows:

[0075] (1) The sputtering method is radio frequency sputtering, and the working gas is pure argon;

[0076] (2) The substrate temperature is 100°C;

[0077] (3) The background vacuum is 5×10 -2 Pa;

[0078] (4) The sputtering pressure value is 1.0Pa;

[0079] (5) The power density of sputtering is 4.0W / cm 2 , the deposition time is 30min;

[0080] (6) The thickness of the film is 200nm;

[0081] Step 2, rapid annealing of nickel oxide film ...

Embodiment 2

[0084] The preparation method of nickel oxide electrochromic thin film in the present embodiment specifically comprises the following steps:

[0085] Step 1. Magnetron sputtering deposition of nickel oxide film

[0086]The co-doped nickel oxide target M x T y Ni z O is placed in a magnetron sputtering coating device, and a nickel oxide film is deposited on an ITO transparent conductive glass substrate, wherein, M is sodium, T is silicon, x:y:z=0.3:0.4:1, during the sputtering process The main parameters of are as follows:

[0087] (1) The sputtering method is radio frequency sputtering, and the working gas is pure argon;

[0088] (2) The substrate temperature is 80°C;

[0089] (3) The background vacuum is 3×10 -2 Pa;

[0090] (4) The sputtering pressure value is 1.2Pa;

[0091] (5) The power density of sputtering is 3.0W / cm 2 , the deposition time is 40min;

[0092] (6) The thickness of the film is 150nm;

[0093] Step 2, rapid annealing of nickel oxide film

[009...

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Abstract

The invention discloses a nickel oxide electrochromic film and a preparation method and application thereof. The preparation method comprises the following steps: by taking co-doped MxTyNizO as a target material (wherein M is at least one of lithium, sodium, potassium, rubidium and cesium, and T is at least one of aluminum, silicon and zirconium), depositing on the surface of a transparent conductive substrate by adopting magnetron sputtering to form a film, and then carrying out rapid thermal annealing treatment under an air condition to obtain the co-doped nickel oxide electrochromic film, the film has high nickel oxide (111) preferred orientation growth and a smooth and compact structure with uniformly distributed pinholes, and the electrochromic response speed, the fading state transmittance, the optical modulation amplitude, the charge capacity and the cycling stability of the film can be improved.

Description

technical field [0001] The invention relates to a method for preparing a nickel oxide film, in particular to a nickel oxide electrochromic film and a preparation method thereof, especially for improving the performance of a nickel oxide film in an ion storage layer in a conventional electrochromic device, so as to meet future high demands The stable and long-lasting use requirements of performance electrochromic devices belong to the technical field of electrochromic devices and applications. Background technique [0002] At present, electrochromic devices that use external voltage to adjust the double injection of lithium ions and electrons to achieve fast and reversible optical switching have been applied in the fields of building energy saving, modern display, automobile rearview mirror, aircraft porthole and so on. The basic requirements of the above-mentioned applications for electrochromic devices are: wide light modulation range, good cycle stability, stable mechanica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/34C01G53/00
CPCC03C17/3417C01G53/006C03C2218/154C01P2002/72C01P2004/03C01P2002/85C01P2006/40
Inventor 杨晔宋伟杰吴超兰品军谭瑞琴
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI