Unlock instant, AI-driven research and patent intelligence for your innovation.

Cutting tool, method of manufacturing cutting tool, and method of cutting wafer

A technology for cutting tools and wafers, which is applied in the manufacturing of cutting tools, manufacturing tools, semiconductor/solid-state devices, etc. of sawing machines, which can solve problems such as peeling and achieve the effect of narrow kerf width

Pending Publication Date: 2021-03-12
DISCO CORP
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the case where an insulating film made of a Low-k material (i.e., a Low-k film) is laminated in a multilayer wiring layer, there is a problem that when the multilayer wiring layer is cut along the planned dividing line with a cutting tool, , Cracks or chips are generated on the Low-k film, and the Low-k film is peeled off from the wafer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cutting tool, method of manufacturing cutting tool, and method of cutting wafer
  • Cutting tool, method of manufacturing cutting tool, and method of cutting wafer
  • Cutting tool, method of manufacturing cutting tool, and method of cutting wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] An embodiment of one embodiment of the present invention will be described with reference to the drawings. figure 1 It is a perspective view of the cutting tool 2 . The cutting tool 2 is a washer type (also referred to as a hubless type) tool whose entirety is composed of abrasive grains 2a and a bonding material 2b.

[0028] The abrasive grains 2a are formed of diamond, but the material forming the abrasive grains 2a is not limited to diamond. The abrasive grains 2 a may be formed of cBN (cubic boron nitride, cubic boron nitride), white corundum (WA), green carbon (GC), or the like.

[0029] The particle size of the abrasive grains 2a is very small, and the average particle size is 12 μm or less. Regarding the average particle diameter, for example, when the size of one particle is represented by a predetermined particle diameter (that is, length), the average particle diameter is determined from the frequency distribution of a particle group represented by the parti...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention provides a cutting tool, a method of manufacturing the cutting tool, and a method of cutting a wafer. It is desirable to provide a cutting tool capable of suppressing peeling of an insulating film that is easy to peel during cutting, such as a Low-k film, and capable of cutting the insulating film. Provided is a cutting tool capable of suppressing peeling of an insulating film that is easy to peel during cutting and capable of cutting the insulating film. The cutting tool has a bonding material and abrasive grains, the cutting tool fixes the abrasive grains by the bonding material, and at least a part of the bonding material is vitreous carbon. Preferably, the average particle diameter of the abrasive grains of the cutting tool is 12 [mu] m or less.

Description

technical field [0001] The present invention relates to a cutting tool in which abrasive grains are fixed by a bonding material, a method of manufacturing the cutting tool, and a wafer cutting method in which the cutting tool cuts an insulating film provided on one surface side of the wafer. Background technique [0002] There is known a method of dividing a wafer along each planned dividing line, and the wafer is formed with IC (Integrated Circuit, Integrated Circuit), LSI (LargeScale Integration) in each region divided by a plurality of dividing lines provided on the front side. , large-scale integration) and other devices. [0003] A multilayer wiring layer in which insulating films and metal layers are alternately laminated is formed on the front side of the wafer. In order to improve the throughput of circuits such as ICs and LSIs, the insulating film is sometimes formed of a low dielectric constant insulator material (ie, Low-k material). As Low-k material, SiO is us...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24D5/12B24D18/00B24B27/06B24B41/06H01L21/78
CPCB24D5/12B24D18/0009B24B27/06B24B41/068H01L21/78B26D1/0006B26D2001/002B28D5/022B23D65/00H01L21/67092H01L21/3105
Inventor 深泽隆服部滋
Owner DISCO CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More