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Sampling method of single crystal oxygen sample wafer

A technology of oxygen samples and single crystals, which is applied in the sampling field of single crystal oxygen samples, can solve the problems of affecting the production capacity of silicon wafers and large consumption of silicon rods, etc., and achieve the effects of prolonging the effective service life, increasing production capacity, and improving stability

Inactive Publication Date: 2021-03-16
云南宇泽半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this application, sampling is carried out on silicon rods. Although the success rate of sampling is high, it consumes a lot of silicon rods and affects the production capacity of silicon wafers.

Method used

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  • Sampling method of single crystal oxygen sample wafer
  • Sampling method of single crystal oxygen sample wafer
  • Sampling method of single crystal oxygen sample wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056]In the sampling method of the single crystal oxygen sample of the present embodiment, the sampling tooling adopted comprises:

[0057] base1;

[0058] The deck 2 is composed of a vertical bar 20 and a collar 21, the vertical bar 20 is vertically placed on the top surface of the end of the base 1, and the collar 21 is fixed on the top of the vertical bar 20;

[0059] Slider one 3, its activity is placed on the top surface of base 1;

[0060] Fastener one 5, which cooperates with the slider one 3 to limit the movement of the slider one 3;

[0061] The small-diameter end of the single-crystal head 2000 is clamped in the collar 21 ; the large-diameter end of the single-crystal head 2000 abuts against the slider one 3 .

[0062] The segregation coefficient of oxygen in silicon is greater than one, so in single crystal silicon rods, generally speaking, in the distribution of oxygen content in the axial direction of the single crystal, the oxygen content at the end is the hig...

Embodiment 2

[0075] The sampling method of the single crystal oxygen sample in this embodiment is further improved on the basis of Embodiment 1, and the sampling tool also includes:

[0076] Slider 2 4 is movable on the top surface of base 1, between deck 2 and slider 1 3; the middle of the top of slider 2 4 is sunken downward to form an arc-shaped relief groove 40;

[0077] Fastener 2 6 is connected with slide block 2 4 to limit the movement of slide block 2 4 .

[0078] The cooperation of the slider-3 and the collar 21 can limit and fix the single crystal head 2000 to a certain extent, but there is still no effective support for limiting the force along the width direction of the base 1, so this implementation For example, set slider 2 to 4, such as Figure 4 As shown, the single crystal head 2000 is provided with a limiting force along the width direction of the base 1 .

[0079] The slider two 4 of the present embodiment has the same shape and structure as the slider one 3, except th...

Embodiment 3

[0083] The sampling method of the single crystal oxygen sample of this embodiment is further improved on the basis of Embodiment 2. A fixed rod 30 is formed vertically upward on the top surface of the slider-3, and one side of the fixed rod 30 is close to the slider-3 The faces of seat 2 are coplanar.

[0084] Such as Figure 4 As shown, the fixing rod 30 cooperates with the slider one 3. When abutting and fixing the large-diameter end face of the single crystal head 2000, the contact area with the large-diameter end face can be increased, thereby further improving the stability of the single crystal head. 2000 Fixed stability.

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Abstract

The invention discloses a sampling method of a single crystal oxygen sample wafer, and belongs to the technical field of photovoltaics. The method comprises the following steps: 1, placing: taking a single crystal head cut off from a Czochralski silicon forming structure, and placing and fixing the single crystal head on a sampling tool to make the large-diameter end surface of the single crystalhead vertical to the horizontal plane; 2, slicing: starting a cutting machine, and cutting the single crystal head to prepare an oxygen sample wafer; and 3, sampling: taking down a test sample on theoxygen sample wafer according to the sampling standard of the oxygen sample wafer to finish the sampling work. According to the sampling method, an available silicon rod part does not need to be sampled, the yield and the production efficiency of a silicon wafer are not influenced, the single crystal head part for melting-back remanufacturing in conventional production is fixedly sampled, the operation is simple and convenient, and the influence on the productivity of the silicon wafer is avoided.

Description

technical field [0001] The invention belongs to the technical field of photovoltaics, and more specifically relates to a sampling method for a single crystal oxygen sample. Background technique [0002] At present, with the development of the photovoltaic industry towards a more efficient direction, the quality requirements of cells for monocrystalline silicon are gradually increasing, and the content of monocrystalline oxygen will have a certain negative impact on the cell efficiency, resistivity, PL, etc. of monocrystalline silicon wafers. , so at present, Czochralski monocrystalline silicon monitors the oxygen content of the single crystal more strictly. At present, the oxygen content of each single crystal in the industry basically maintains all sampling inspections. [0003] After the Czochralski monocrystalline silicon is formed, the middle part is a silicon rod of equal diameter, which can be used as a silicon rod, and the two ends are tapered single crystal heads. Wh...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/00
CPCB28D5/00B28D5/0058B28D5/0082
Inventor 高文飞
Owner 云南宇泽半导体有限公司