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P-type gate enhanced GaN-based HEMT device and preparation method thereof

An enhanced, device technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as deteriorating device performance and reliability, improve performance and reliability, increase ionization efficiency, and reduce load. The effect of carrier traps and leakage channels

Active Publication Date: 2021-03-16
晶能光電股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to overcome the above deficiencies, the present invention provides a p-type gate-enhanced GaN-based HEMT device and its preparation method, which effectively solves the problem caused by the diffusion of high-concentration Mg from pGaN to the AlGaN barrier layer and GaN channel layer in the existing HEMT device. Technical issues that degrade device performance and reliability

Method used

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  • P-type gate enhanced GaN-based HEMT device and preparation method thereof
  • P-type gate enhanced GaN-based HEMT device and preparation method thereof

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Embodiment 1

[0029] Prepared by the following steps as figure 1 The p-type gate-enhanced GaN-based HEMT device shown:

[0030]First, put the SiC substrate 101 into the MOCVD reaction chamber; then, grow a 200nm AlN buffer layer 102 at a pressure of 70torr and a temperature of 1000°C; 3000nm carbon-doped high-resistance GaN withstand voltage film layer 103; again change the growth conditions to 200torr pressure, 1050°C GaN growth conditions, grow 300nm UGaN channel layer 104; further change the conditions to 100torr pressure, 1030°C AlGaN Growth condition, grow the AlGaN barrier layer 105 of 25% Al composition of 15nm; Afterwards, grow p-type GaN / InGaN superlattice layer 106 on the AlGaN barrier layer 105, the cycle number is 15loop, p-type in each cycle Both the thickness of the GaN layer and the InGaN layer are 2nm, and the hole concentration of the p-type GaN layer is 2E18, the growth conditions are 200torr GaN growth gas flow, and the temperature is 950°C. Finally, the source S, the d...

Embodiment 2

[0032] Prepared by the following steps as figure 2 The p-type gate-enhanced GaN-based HEMT device shown:

[0033] First, a silicon substrate 201 with a (111) crystal orientation is placed in an MOCVD reaction chamber, and the high-temperature H 2 treatment to remove surface oxides; then, grow a layer of 1000nm AlN / AlGaN multilayer buffer layer 202 at a pressure of 70torr and a temperature of 1000°C, wherein the thickness of the AlN layer is 300nm, and the thickness of the AlGaN layer is 700nm; change the atmosphere Under the GaN growth conditions of 70torr pressure and 1000°C, grow a 3000nm carbon-doped high-resistance gallium nitride withstand voltage film layer 203; change the growth conditions again to 200torr pressure, 1050°C GaN growth conditions, and grow a 300nm UGaN channel layer 204 ; change the conditions to 100torr pressure, AlGaN growth conditions at 1030°C, and grow a 15nm AlGaN barrier layer 205 with 25% Al composition; further change the growth conditions to 7...

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Abstract

The invention provides a p-type gate enhanced GaN-based HEMT device and a preparation method thereof. The HEMT device sequentially comprises a substrate layer, a buffer layer, a voltage withstanding layer, a channel layer and a barrier layer from bottom to top, and further comprises a source electrode and a drain electrode formed on the surface of the barrier layer, and a P-type GaN / InGaN superlattice layer and a gate electrode formed on the surface of the barrier layer, wherein in the P-type GaN / InGaN superlattice layer, the P-type GaN layer is doped with Mg, and the hole concentration is 5E17-5E18; and the InGaN layer is not doped with Mg. A p-type GaN / InGaN superlattice structure is used for replacing a traditional p-type GaN layer, and the ionization efficiency of Mg is improved through a polarization electric field of GaN / InGaN superlattices, so that the Mg doping concentration in a p-type gate is reduced, and the quality of a p-type gate material is improved. Meanwhile, low-concentration Mg doping also reduces diffusion of Mg into the barrier and the channel layer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a p-type gate enhanced GaN-based HEMT device and a preparation method thereof. Background technique [0002] The GaN-based enhanced HEMT based on the pGaN gate structure has the characteristics of simple drive design, failure protection, outstanding high-frequency performance, and good consistency with the device, and has become the mainstream design of GaN-based HEMT devices. However, in the pGaN gate HEMT structure, the pGaN on the gate is usually around 50nm thick. The activation energy of Mg impurities in GaN is as high as 120meV-250meV (based on different test methods), and Mg and H (hydrogen atoms) easily form Mg-H complexes during GaN growth, making the ionization of Mg more difficult, resulting in pGaN The effective activation rate of Mg in the medium is only 1%-2% of the actual doped Mg concentration. [0003] In order to effectively deplete the HEMT heterojunct...

Claims

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Application Information

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IPC IPC(8): H01L29/778H01L29/06H01L21/335H01L29/423
CPCH01L29/7786H01L29/0603H01L29/0684H01L29/42356H01L29/66462Y02P70/50
Inventor 付羿周名兵
Owner 晶能光電股份有限公司
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