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Band-gap reference circuit with pre-voltage stabilization and base current elimination

A pre-stabilization and reference voltage technology, which is applied in the direction of electrical components, amplifier parts, amplifiers, etc., can solve the problems of large base current, low current amplification, and reduce the accuracy of the bandgap reference, so as to reduce power consumption , Good bandgap reference voltage accuracy, and the effect of improving accuracy

Pending Publication Date: 2021-03-26
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] (1) The traditional bandgap reference operational amplifier is powered by the power supply voltage, and the noise on the power supply will directly affect the accuracy of the bandgap reference;
[0008] (2) Because the current amplification factor of the existing process transistor is low, the base current is relatively large, which affects the accuracy of the bandgap reference;
[0009] (3) The traditional bandgap reference circuit uses a differential pair as the input of the op amp, so there will be an offset voltage, which will reduce the accuracy of the bandgap reference;

Method used

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  • Band-gap reference circuit with pre-voltage stabilization and base current elimination
  • Band-gap reference circuit with pre-voltage stabilization and base current elimination
  • Band-gap reference circuit with pre-voltage stabilization and base current elimination

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Embodiment Construction

[0023] The following will be specifically described below according to the figure:

[0024] according to figure 2 The module shown 1 This module includes the first PMOS tube M1, the second PMOS tube M2, the first NPN triode Q1, the second NPN triode Q2, the third NPN triode Q3, the fourth NPN triode Q4, the fifth NPN triode Q5, The sixth NPN triode Q6, the resistor R0, the resistor R1, the first stabilizing tube D1, the first capacitor C1; wherein: the first PMOS tube M1 and the second PMOS tube M2 constitute a current mirror. The first NPN triode Q1, the second NPN triode Q2, the third NPN triode Q3, and the fourth NPN triode Q4 generate a PTAT current through the current mirror image to the first stabilizing tube D1. The fifth NPN triode Q5, the sixth NPN triode Q6 is the Dalington structure, which provides a large output carrying capacity for the module.

[0025] according to figure 2 Assume that flows 1 Current is i 1

[0026] V B = V BE1 + V CE3 = V BE2 + V CE4 + I 1 R 1 (...

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Abstract

The invention provides a band-gap reference circuit with base current elimination by adopting a pre-voltage-stabilizing structure, which solves the problems that the power supply rejection of the existing band-gap reference circuit is relatively low, the current gain of a triode is relatively low due to the influence of a process, and the reference voltage precision is finally influenced. The band-gap reference circuit comprises a pre-voltage-stabilizing module and a band-gap reference circuit module. The pre-voltage-stabilizing module generates a stable voltage to supply power to the band-gapreference, the core band-gap reference circuit adopts a non-operational-amplifier structure, the influence of offset voltage can be reduced, and the influence of base current on the band-gap reference can be greatly reduced by adopting the design of triode base current elimination.

Description

Technical field [0001] The present invention belongs to the field of analog integrated circuit design, and is specifically involved in a band gap reference circuit with pre-regulated pressure and base current elimination. Background technique [0002] As the power management chip develops towards the large current and high frequency direction, the requirements for the bandgap reference circuit are increasing, and the large current of the chip means the power consumption of the entire system, so the reference circuit needs to be a relatively wide temperature. Work within the range and ensure that the output of the reference voltage remains a relatively small fluctuation. Therefore, the high power rejection ratio is studied, and the bandgap reference of the low-temperature drifting becomes a hot spot design direction. [0003] figure 1 As shown in a conventional band gap reference circuit, the basic principle is to add two an amount of opposite temperature coefficient to an appro...

Claims

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Application Information

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IPC IPC(8): H03F1/02
CPCH03F1/0205
Inventor 李威邹志航陈志贤
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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