Packaging structure, preparation method thereof and photoelectric device

A packaging structure, optoelectronic device technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of poor device stability, water-oxygen isolation effect, poor thermal conductivity, short life, etc., to reduce interface thermal resistance, improve Water and oxygen barrier properties and the effect of improving thermal conductivity

Active Publication Date: 2021-03-30
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above deficiencies in the prior art, the purpose of the present invention is to provide a packaging structure and its preparation method and optoelectronic device, aiming at solving the problems of poor water-oxygen isolation effect and thermal conductivity of the existing packaging film, resulting in poor device stability and The problem of short life

Method used

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  • Packaging structure, preparation method thereof and photoelectric device
  • Packaging structure, preparation method thereof and photoelectric device
  • Packaging structure, preparation method thereof and photoelectric device

Examples

Experimental program
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Embodiment 1

[0051] This embodiment provides an optoelectronic device. The optoelectronic device includes a substrate, a quantum dot light emitting diode combined on the substrate and a package structure for packaging the quantum dot light emitting diode. The structure of the photoelectric device is as follows from bottom to top: ITO substrate (50nm) / PEDOT:PSS (50nm) / poly-TPD (30nm) / quantum dot light-emitting layer (20nm) / ZnO (30nm) / Mg-Ag Alloy (50nm) / package structure (400mm).

[0052] On the ITO substrate, each layer is sequentially formed according to the quantum dot light emitting diode structure of this embodiment, thereby forming a quantum dot light emitting diode;

[0053] The encapsulation structure is composed of two layers: a 300nm thick porous activated carbon film, and a 100nm thick silicon dioxide film formed on the porous activated carbon film. The preparation process of the porous activated carbon film is as follows: make polyvinylidene chloride into ink, and then inkjet p...

Embodiment 2

[0056] This embodiment provides an optoelectronic device. The optoelectronic device includes a substrate, a quantum dot light emitting diode combined on the substrate and a package structure for packaging the quantum dot light emitting diode. The structure of the photoelectric device is as follows from bottom to top: ITO substrate (50nm) / PEDOT:PSS (50nm) / poly-TPD (30nm) / quantum dot light-emitting layer (20nm) / ZnO (30nm) / Mg-Ag Alloy (50nm) / package structure (600mm).

[0057] On the ITO substrate, each layer is sequentially formed according to the quantum dot light emitting diode structure of this embodiment, thereby forming a quantum dot light emitting diode;

[0058]The encapsulation structure is composed of two layers: a 300nm thick porous activated carbon film, and a 100nm thick silicon dioxide film formed on the porous activated carbon film. The preparation process of the porous activated carbon film is as follows: make polyacrylonitrile into ink, and then inkjet print it...

Embodiment 3

[0061] This embodiment provides an optoelectronic device. The optoelectronic device includes a substrate, a quantum dot light emitting diode combined on the substrate and a package structure for packaging the quantum dot light emitting diode. The structure of the photoelectric device is as follows from bottom to top: ITO substrate (50nm) / PEDOT:PSS (50nm) / poly-TPD (30nm) / quantum dot light-emitting layer (20nm) / ZnO (30nm) / Mg-Ag Alloy (50nm) / package structure (400mm).

[0062] On the ITO substrate, each layer is sequentially formed according to the quantum dot light emitting diode structure of this embodiment, thereby forming a quantum dot light emitting diode;

[0063] The encapsulation structure consists of two layers: a 300nm thick porous activated carbon film, and a 100nm thick titanium dioxide film formed on the porous activated carbon film. The preparation process of the porous activated carbon film is as follows: polyvinylidene chloride compound Ink, then inkjet printing...

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Abstract

The invention discloses a packaging structure, a preparation method thereof and a photoelectric device. The packaging structure comprises an activated carbon thin film and an oxide thin film formed onthe activated carbon thin film, wherein the activated carbon thin film is of a porous structure, and the holes are closed holes. The packaging structure formed by the porous activated carbon film andthe oxide film can effectively prevent water and oxygen from corroding a device, and the service life of the device is prolonged; meanwhile, due to the use of the carbon material with high thermal conductivity, the thermal conductivity of the packaging material can be remarkably improved, thereby improving the stability of the device and prolonging the service life of the device. Besides, compared with traditional cover plate packaging, the packaging method has the advantages of being light, thin, efficient and the like, the defect that glass is fragile is overcome, and therefore the servicelife of the device is prolonged.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a packaging structure, a preparation method thereof and an optoelectronic device. Background technique [0002] The short life of optoelectronic devices is mainly due to the adsorption of oxygen and moisture in the air. The water vapor in these environments penetrates into the device, which will accelerate the aging of the device and reduce the life of the device. The organic film and metal electrodes are protected by the packaging process from the influence of the outside air, and finally the purpose of prolonging the life of the device can be achieved, so the packaging process has a great impact on the life of the device. [0003] Traditional optoelectronic device packaging technology is completed in a glove box with water and oxygen content below 1ppm. The manufactured device is transferred into the glove box by the linear manipulator in the glove box. The bac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52
CPCH10K50/844
Inventor 朱佩向超宇罗植天
Owner TCL CORPORATION
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