Trench type capacitor device and preparation method

A trench type, capacitor technology, applied in the field of semiconductor passive device manufacturing, can solve the problems of photoresist residue, plasma damage, BARC residue, etc., and achieve the effect of avoiding plasma damage, reducing the size of the opening, and increasing the capacitance value
CN112635440AInactive Publication Date: 2021-04-09上海微阱电子科技有限公司
3 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
上海微阱电子科技有限公司
Publication Date
2021-04-09
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides a preparation method of a trench type capacitor device, a trench capacitor region comprises: a plurality of trenches and a capacitor structure, wherein the trenches penetrate through a first dielectric layer and end at a first metal interconnection layer, and the capacitor structure is located on the first dielectric layer and fills the trenches; a second dielectric layer with a first opening, a second opening penetrating through the second dielectric layer and the first dielectric layer and ending at a second metal interconnection layer, and an electrode interconnection layer filling the first opening and the second opening. The side wall of the side, close to the second opening, of the first opening is overlapped with an extension line of the side wall of the side of the second opening, so that the depth of the second opening is further increased, the opening size of the second opening is reduced, the capacitance value per unit area is effectively increased, and a high-performance trench type capacitor device is formed, thus having significant significance.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the field of semiconductor passive device manufacturing, and more specifically, to a trench capacitor device and a preparation method. Background technique

[0002] A capacitor is a passive device used for energy storage and is widely used in semiconductor circuits such as coupling, filtering, resonance, integration and compensation. The number of photolithographic layers of the trench type capacitor device in the prior art is more than that of the flat capacitor device, resulting in an increase in the cost of the manufacturing process, such as figure 1 The process flow of the prior art trench capacitor device is shown, including capacitor trench photolithography, lower plate photolithography, capacitor dielectric layer / top plate photolithography, capacitor via photolithography and interconnect metal photolithography A total of 5 photolithography. Moreover, before the photolithography of the lower plate, coating and back-etch...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More