Performance-controllable two-dimensional semiconductor transistor structure and production method thereof

Abstract

The invention belongs to the technical field of semiconductor devices, and particularly relates to a performance-controllable two-dimensional semiconductor transistor structure and a production method thereof. The structure comprises a substrate, a two-dimensional semiconductor material located on the substrate, a source-drain metal electrode, an oxide dielectric layer and a laminated metal gate located on the dielectric layer, wherein the oxide dielectric layer is a double-layer dielectric layer, and the laminated metal gate is a double-layer metal gate structure of bottom active metal and top inert metal. According to the invention, a double-layer dielectric layer is formed by utilizing a solid-phase diffusion reaction generated by direct contact of the bottom active metal and the oxide dielectric layer I, and the carrier concentration of the two-dimensional semiconductor material is accurately regulated and controlled by an electric dipole effect by controlling the thickness of the bottom active metal. According to the invention, the threshold voltage of the two-dimensional semiconductor field effect transistor can be adjusted, the switching ratio and the on-state current of the device are improved, and the structure has a wide application prospect in the manufacture of large-scale digital integrated circuits.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a two-dimensional semiconductor transistor structure with controllable performance and a preparation method thereof. Background technique [0002] Since the first discovery of graphene, two-dimensional semiconductor materials have attracted extensive attention due to their special layered structure and outstanding electrical properties. Two-dimensional semiconductor materials have a large bandgap range, which can not only overcome the short channel effect and quantum effect, maintain a good switching frequency, but also improve and enhance the performance of many existing electronic components. At present, the two-dimensional semiconductor materials prepared by mechanical exfoliation or chemical vapor deposition mainly include MoS 2 、MoTe 2 、WSe 2 、WS 2 , h-BN and black phosphorus, etc. Its good electrical and photoelectric properties are conducive to the prepa...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a two-dimensional semiconductor transistor structure with controllable performance and its preparation method, so as to solve the existing technical problem that the two-dimensional semiconductor material mentioned in the background technology is difficult to carry out carrier doping

Images