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Magnetic tunnel junction structure and magnetic random access memory

A technology of magnetic tunnel junction and random access memory, which is applied in the field of memory, and can solve the problems of increasing the error rate of memory read operation and reducing it.

Pending Publication Date: 2021-04-09
SHANGHAI CIYU INFORMATION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to improve the thermal stability factor (▽) of ultra-small MRAM unit devices, the effective vertical effective Anisotropic energy density, thereby maintaining a high thermal stability factor (▽), but the tunnel magnetoresistance ratio (Tunnel Magnetoresistance Ratio, TMR) of the magnetic tunnel junction will decrease, thereby increasing the error rate of memory read operations

Method used

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  • Magnetic tunnel junction structure and magnetic random access memory
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  • Magnetic tunnel junction structure and magnetic random access memory

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Embodiment Construction

[0020] Please refer to the drawings in the accompanying drawings, wherein like reference numerals refer to like components. The following description is based on illustrated specific embodiments of the present application, which should not be construed as limiting other specific embodiments of the present application that are not described in detail here.

[0021] The following descriptions of the various embodiments refer to the attached drawings to illustrate specific embodiments that the present application can be implemented in. The directional terms mentioned in this application, such as "up", "down", "front", "rear", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the application, but not to limit the application.

[0022] The terms "first", "second", "third", etc. (if any) in the description and claims of this application and t...

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Abstract

The invention provides a magnetic tunnel junction structure and a magnetic random access memory thereof. The magnetic tunnel junction structure comprises free layers of a double-layer structure, a perpendicular anisotropy enhancement layer formed by non-magnetic metal oxide between the two free layers, and a magnetic damping barrier layer arranged above the free layers. Through the magnetic tunnel junction structure design that the double free layers are combined with the vertical anisotropy enhancement layer, the thermal stability of the device is enhanced, the damping coefficient is reduced, and the reduction of write current is facilitated.

Description

technical field [0001] The invention relates to the field of memory technology, in particular to a magnetic tunnel junction structure and a magnetic random access memory. Background technique [0002] Magnetic random access memory (MRAM) in the magnetic tunnel junction (Magnetic tunnel junction; MTJ) with vertical anisotropy (Perpendicular Magnetic Anisotropy; PMA), as a free layer for storing information, has two in the vertical direction The magnetization direction, namely: up and down, corresponds to "0" and "1" or "1" and "0" in binary respectively. In practical applications, when reading information or leaving it blank, the magnetization direction of the free layer will remain unchanged; during the writing process, if a signal different from the existing state is input, the magnetization direction of the free layer will be reversed by 180 degrees in the vertical direction. The ability of the magnetization direction of the free layer of the magnetic random access memory...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/10H01L27/22G11C11/16H10N50/10
CPCG11C11/161H10B61/00H10N50/85H10N50/10
Inventor 张云森郭一民肖荣福陈峻
Owner SHANGHAI CIYU INFORMATION TECH CO LTD
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