Microwave annealing modification method for gallium oxide material

Abstract

The invention relates to a microwave annealing modification method for a gallium oxide material. The microwave annealing modification method for the gallium oxide material comprises the following steps: providing a substrate, wherein the surface of the substrate is provided with a gallium oxide layer; and carrying out microwave annealing processing on the gallium oxide layer at a preset temperature, wherein the preset temperature is lower than a diffusion temperature, and the diffusion temperature is the lowest temperature at which thermal diffusion occurs between the gallium oxide material in the gallium oxide layer and the substrate. According to the invention, the problem that thermal diffusion between the gallium oxide layer and the substrate is likely to happen due to the fact that the annealing temperature is too high in the annealing process in an existing traditional annealing mode is solved, the microwave annealing cost is low, the annealing treatment cost of the gallium oxide material is reduced, and large-scale quantitative production is facilitated.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a microwave annealing modification method for gallium oxide materials. Background technique [0002] As a third-generation wide bandgap semiconductor material, gallium oxide has the advantages of larger forbidden band width and higher breakdown field strength. The ultra-wide band gap of gallium oxide material makes it have broad application prospects in the manufacture of high-power and high-frequency devices. [0003] Annealing is an important step in semiconductor process engineering for modifying material layers. Traditional annealing processes include tube furnace annealing, laser annealing and rapid thermal annealing (RTP). Among them, the tube furnace annealing method and the rapid thermal annealing method require high temperature during the annealing process, which is easy to induce the thermal diffusion effect, resulting in the diffusion between the ...

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Problems solved by technology

[0005] The invention provides a microwave annealing modification method for gallium oxide materials, which is used to solve the problem that thermal diffusion easily occurs during the annealing process of gallium oxide materials in the prior art, so as to improve the performance of the final semiconductor device , and reduce the annealing cost of gallium oxide materials

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