[0020]Embodiments of the present invention provide a semiconductor laser portion coherence, referencefigure 1 ,include:
[0021]First semiconductor laser chip G1To the n semiconductor laser chip Gn, Row-semiconductor laser chip GkThe k-laser, the first laser, the nth laser, performs the space, the space, and the N is an integer greater than or equal to 2, and the k is greater than or equal to 1 and less than or equal to N;
[0022]Optical fiber 120, the incident end of the optical fiber 120 has a partially reflective film layer 121;
[0023]The focus coupling mirror 130 is adapted to couple the first laser beam to the nth laser in the spatial self-contained laser to the optical fiber 120, the focused coupling mirror 130 toward the fiber 120 incident end ;
[0024]The partially reflective film layer 121 reflects a portion of the kth laser such that the n-k + 1 semiconductor laser chip G is injected after the reflected kth laser is subjected to the focused coupling mirror 130.N-K + 1.
[0025]In this embodiment, N 's value can be reasonable selection as needed, not limited thereto. N is an even or odd number. Preferably, N is an odd number, the corresponding sub-(N + 1) / 2 laser passes through the center optical axis of the focused coupling mirror 130.
[0026]The partially reflective film layer 121 is adapted to reflect a partial beam in the kth laser, and most of the beams in the k-laser pass through the partially reflective film layer 121 into the optical fiber.
[0027]The reflectance of the partially reflective film layer 121 is 5% to 15%. The reflectance of the partially reflective film layer 121 is that if the reflectance of the partially reflective film layer 121 is less than 5%, it results in less reflection of the k-k., Then the energy reflected in the kth laser is small, Reflective Returning Knight with the Nth-k + 1 laser in the n-k + 1 semiconductor laser chip is small, and some coherent modes form a mode competitive advantage in the gain material in the corresponding laser chip. Weak; if the reflectance of the partially reflective film layer 121 is greater than 15%, then a k-laser light passes through a portion of the reflective film layer 121 is small, which results in the power of the laser light output by the final optical fiber to decrease.
[0028]The focused coupling mirror 130 has a central optical axis of the focus of the focus coupled mirror 130; the first laser light in the space, and the nth laser light is parallel to the center optical axis, and the space combination The kth laser in the bundle laser with the nth-k + 1 laser with respect to the center optical axis symmetrical setting.
[0029]The central axis of the optical fiber 120 is coincident with a central optical axis of the focus of the focus coupler 130, and the focus of the focused coupling mirror 130 is located on the surface of the partially reflective film layer 121.
[0030]The semiconductor laser portion of the coherent carrier further includes: a first alignment unit to a nth collimation unit, the kth collimation unit is adapted to the kth semiconductor laser chip GkThe k-laser emitted is collimated. In this embodiment, the nth laser is spaced apart from the first laser light, and the first laser light is spaced.
[0031]In the present embodiment, the rright unit includes a rhaope-axis collimation lens and a kth slow shaft, the rhaopery collision lens and the kth slow shaft, the direct lens sequentially on the row-semiconductor laser. Chip GkThe kth laser is collimated. That is, the rhax horizontal straight lens first is collimated to the kth laser, the ruthenium is collimated to the kth laser. The rhaopery is located between the Slow Shaft Light Lens and the King Semiconductor Laser Chip.
[0032]In other embodiments, the kth collimating unit includes only a kth slow axle, or the Knth collimating unit includes only a kth fast axis.
[0033]The kth semiconductor laser chip GkHas a relatively Knough back chamber surface and a kth front chamber surface suitable for emitting a k-laser, and the front cavity surface is provided with a kth prostate coating layer, and the first K The cavity surface is provided with a ruthenium coating layer, and the reflectance of the ruthenium coated layer is greater than the grade K. In the present embodiment, the reflectance of the ruthenium coating layer is 99% or more; the reflectance of the quadratic coating layer is less than or equal to 2%.
[0034]First semiconductor laser chip G1To the n semiconductor laser chip GnThe direction of the exit laser is parallel. In one embodiment, in the first semiconductor laser chip G1To the n semiconductor laser chip GnIn the direction of the laser, the first semiconductor laser chip G1To the n semiconductor laser chip GnBefore and after dislocation, the first semiconductor laser chip G1To the n semiconductor laser chip GnThe projection energy of the edge of the adjacent semiconductor laser chip is partially coincident. In the collimation direction of the first slow axle, the straight lens is collided in the collision of the laser, the first slow axle is performed before and after the first slow axle, so that the first slow axle is directly lense. The projection energy of the edge of the Nth slow axis is partially coincident, thus causing the distance between the first laser and the adjacent laser light more tight, so that the value of n can be large, the final fiber output is output. Power is improved.
[0035]It should be noted that the kth fast axis collimation lens is generally arranged adjacent the k-semiconductor laser chip G.kOutlet.
[0036]In the present embodiment, the first laser beam to the nth laser focuses on the focus of the focused coupling 130 by focusing, that is, the input end of the optical fiber is located at the waist position of the Gaussian beam, and the first laser beam to the nth laser. The partially reflective film layer 121 is partially reflected, in particular, the partially reflective film layer 121 reflects the portion K laser such that the N-K + 1 semiconductor laser chip G is injected after the reflected k-laser is subjected to the focused coupling 130.N-K + 1.
[0037]For the first semiconductor laser chip G1The first laser and the n semiconductor laser chip GNThe n-laser, the partially reflective film layer 121 reflects the portion of the first laser, and is injected into the node semiconductor laser chip G after the first laser reflected by the partially reflective film layer 121.NThe partially reflective film layer 121 reflects a portion of the n-laser, and is injected into the first semiconductor laser chip G after the N-laser light reflected by the partially reflective film layer 121.1.
[0038]When N is equal to 2, for the second semiconductor laser chip G2The second laser and N-1 semiconductor laser chip GN-1The n-1 laser, the partially reflective film layer 121 reflects the portion of the second laser light, and the second laser reflected by the partially reflective film layer 121 is injected into the N-1 semiconductor laser chip G after the focused coupling mirror 130.N-1The partially reflective film layer 121 reflects the portion N-1 laser, and is injected into the second semiconductor laser chip G after the N-1 laser reflected by the partially reflective film layer 121.2.
[0039]When N is equal to 3, for the third semiconductor laser chip G3The third laser and N-2 semiconductor laser chip GN-2The n-2 laser, the partially reflective film layer 121 reflects the portion of the third laser, which is injected into the n-2 semiconductor laser chip G after the third laser reflected by the partially reflective film layer 121 is subjected to the focus coupled mirror 130.N-2The partially reflective film layer 121 reflects the portion of the N-2 laser, which is injected into the third semiconductor laser chip G after the n-2 laser reflected by the partially reflective film layer 121.3.
[0040]In a specific embodiment, in an example, an example is an example, for the first semiconductor laser chip G1First laser and seventh semiconductor laser chip G7The seven laser, the partially reflective film layer 121 reflects the portion of the first laser, and is injected into the seventh semiconductor laser chip G after the first laser reflected by the partially reflective film layer 121.7The partially reflective film layer 121 reflects part of the seventh laser light, and injects the seventh laser light reflected by the partially reflective film layer 121 after the focal coupling mirror 130 is injected into the first semiconductor laser chip G.1For the second semiconductor laser chip G2The second laser and the sixth semiconductor laser chip G6The sixth laser, the partially reflective film layer 121 reflects the portion of the second laser, which is injected into the sixth semiconductor laser chip after partially reflective film layer 121.6The portion of the reflective film layer 121 reflects part sixth laser light, and is injected into the second semiconductor laser chip G after the second laser light reflected by partially reflective film layer 121.2For the third semiconductor laser chip G3The third laser and fifth semiconductor laser chip G5The fifth laser, the partially reflective film layer 121 reflects the portion of the third laser, and is injected into the fifth semiconductor laser chip after partially reflected film layer 121.5The partially reflective film layer 121 reflects the portion of the fifth laser, which is injected into the third semiconductor laser chip G after the fifth laser reflected by the partially reflective film layer 121 is subjected to the focus coupler 130.3For the fourth semiconductor laser chip G4The fourth laser, the partially reflective film layer 121 reflects partial fourth laser, and injects the fourth laser light after the partially reflective film layer 121 is injected into the fourth semiconductor laser chip G.4.
[0041]According to N equal to 9 as an example, for the first semiconductor laser chip G1First laser and ninth semiconductor laser chip G9The ninth laser, the partially reflective film layer 121 reflects the portion of the first laser, which is injected into the ninth semiconductor laser chip after partially reflected film layer 121.9The partially reflective film layer 121 reflects the ninth laser light, and injected into the first semiconductor laser chip G after the ninth laser reflected by partially reflective film layer 121.1For the second semiconductor laser chip G2The second laser and the eighth semiconductor laser chip G8The eighth laser light, the partially reflective film layer 121 reflects partial second laser, and is injected into the eighth semiconductor laser chip G after the second laser reflected by the partially reflective film layer 121.8The partially reflective film layer 121 reflects partial eighth laser light, and is injected into the second semiconductor laser chip G after the eighth laser light reflected by partially reflective film layer 121.2For the third semiconductor laser chip G3Sending third laser and seventh semiconductor laser chip G7The seventh laser, the partially reflective film layer 121 reflects the portion of the third laser, and is injected into the seventh semiconductor laser chip after partially reflective film layer 121.7The partially reflective film layer 121 reflects part of the seventh laser light, and is injected into the third semiconductor laser chip after the seventh laser reflected by the partially reflective film layer 121 via the focused coupling mirror 130.3For the fourth semiconductor laser chip G4The fourth laser and the sixth semiconductor laser chip G6The sixth laser, the partially reflective film layer 121 reflects the portion of the fourth laser, and the fourth laser light reflected by the partially reflective film layer 121 is injected into the sixth semiconductor laser chip G after the focus coupler 130.6The partially reflective film layer 121 reflects part sixth laser light, which is injected into the fourth semiconductor laser chip G after the streamliner 130 reflected by partially reflected film layer 121.4For the fifth semiconductor laser chip G5The fifth laser, the partially reflective film layer 121 reflects partial fifth laser, and is injected into the fifth semiconductor laser chip G after the fifth laser reflected by partially reflective film layer 121.5.
[0042]When n Select other values, work according to the above similar principles, no more detailed.
[0043]In one embodiment, the partially reflective film layer 121 reflects the laser light of all the wavelengths in the k-laser. In another embodiment, the partially reflective film layer 121 is a narrowband moiety reflective film.
[0044]In the present embodiment, the rings of the rigid wavelength, phase, and intensity mode, the kth laser, and the N-K + 1 semiconductor laser chip emitted by the kth-semiconductor laser chip. When the N-K + 1 laser is coherent, the portion of the coherent mode is enhanced since the laser chip corresponding to the presence of the partially reflective film layer 121 is reinforced, so that it forms a mode competitive advantage in the corresponding laser chip in the gain material in the corresponding laser chip. The final other non-coherent mode will disappear, only in the Ko-semiconductor laser chip and the N-K + 1 semiconductor laser chip can generate coherent modes, and the final fiber can realize partial coherential contrast output, and the light beam quality of the optical fiber output. Can be doubled.
[0045]When the part of the reflective film layer 121 is a narrowband moiety reflective film, the narrowband moiety reflects the laser light of the characteristic wavelength, and the final fiber can achieve a portion of the coherent wavelength lock and narrow output. The wavelength width of the laser light of the characteristic wavelength is less than or equal to 1 nm. The partially reflective film layer 121 mainly emphasizes the laser reflection of the characteristic wavelength, and is a narrow wavelength range of laser, and does not emphasize the specific wavelength value.
[0046]The reflectance of the existing kth front chamber coated layer is generally around 5%. In this embodiment, by reducing the reflectance of the first quadratic coating layer in the kth semiconductor laser chip, the reflectance of the ruthenium coating layer is less than or equal to 2%, so that the kth laser that will help reflect in the mode competition. , Achieve better wavelength locking effect.
[0047]In this embodiment, the first laser light emitted by the first semiconductor laser chip of the single tube is collimated, respectively, respectively, after the first laser light to the nth laser, respectively, and then The first laser beam to the nth laser, which is subsequently coupled to the first laser beam to the nth laser in the space to be used in the optical fiber 120, and then reflects the end surface of the optical fiber. The layer 121 is reflected, and the partially reflective film layer 121 performs partial reflection of the first laser to the nth laser to achieve the phase interlocking of the rightener laser chip and the n-k + 1 semiconductor laser chip, and the partial coherence is realized. When the partial reflective film layer 121 is a narrowband moiety reflective film, a portion of the coherence is achieved while the wavelength lock and the spectral narrowed are achieved. Improve the quality of the beam quality of the self-laser, and the wavelength lock output can be realized.
[0048]Obviously, the above embodiment is merely illustrative, and is not limited to the embodiment. For those skilled in the art, different variations or variations can also be made based on the above description. There is no need to be exhausted here. The obvious change or variation thus drawn is still in the range of protection created by the present invention.
