Semiconductor crystal growth device

Abstract

The invention provides a semiconductor crystal growth device. The semiconductor crystal growth device comprises a furnace body; a crucible which is arranged in the furnace body and is used for accommodating a silicon melt; a pulling device which is arranged at the top of the furnace body and is used for lifting a silicon crystal bar out of the silicon melt; a flow guide cylinder which is barrel-shaped and is arranged above the silicon melt in the furnace body along the vertical direction, wherein the pulling device is used for pulling the silicon crystal bar to penetrate through the flow guide cylinder in the vertical direction; and a magnetic field applying device which is used for applying a magnetic field in the horizontal direction to the silicon melt in the crucible; wherein a step protruding downwards is arranged at the bottom of the flow guide cylinder, so that the distance between the bottom of the flow guide cylinder and the liquid level of the silicon melt in the direction of the magnetic field is smaller than the distance between the bottom of the flow guide cylinder and the liquid level of the silicon melt in the direction perpendicular to the magnetic field. According to the semiconductor crystal growth device provided by the invention, the growth quality of the semiconductor crystal is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor crystal growth device. Background technique [0002] The Czochralski method (Cz) is an important method for preparing silicon single crystals for semiconductors and solar energy. The high-purity silicon material placed in the crucible is heated to melt it through a thermal field composed of carbon materials, and then the seed crystal is immersed in the In the melt and through a series of processes (seeding, shouldering, equal diameter, finishing, cooling), a single crystal rod is finally obtained. [0003] In the crystal growth of semiconductor single crystal silicon or solar single crystal silicon using the CZ method, the temperature distribution of the crystal and the melt directly affects the quality and growth rate of the crystal. During the growth of CZ crystal, due to the existence of thermal convection in the melt, the distribution of trace impur...

AI Technical Summary

Problems solved by technology

Because, in the semiconductor crystal growth process, the temperature below the interface between the semiconductor crystal and the melt presents periodic fluctuations with the change of the circumference angle, that is, the Gc of the temperature gradient (dT / dZ) of the crystal and the melt as the interface, Gm fluctuates, therefore, the crystallization speed PS of the crystal in the circumferential angle direction fluctuates periodically, which is not conducive to the control of crystal growth quality

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