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Trench gate IGBT device

A technology of trench gate and trench gate, which is applied in electric solid state devices, semiconductor devices, semiconductor/solid state device components, etc., can solve the problems of large chip area and gate signal transmission delay.

Pending Publication Date: 2021-04-20
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above problems, the present disclosure provides a trench gate IGBT device, which solves the technical problem in the prior art that the gate signal transmission delay is serious due to the large chip area

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] like Figures 2 to 5 As shown, an embodiment of the present disclosure provides a trench gate IGBT device, including a cell region (not marked in the figure), an emitter pad 101 (emitter PAD), a gate bus 102 and a gate pad 103 (gate Extreme PAD).

[0053] Wherein, the cell area includes several first cell structures A and second cell structures B, and the first cell structures A and the second cell structures B are alternately arranged along a preset direction, and the switch of the first cell structure A The delay time is greater than the switching delay time of the second cell structure B. like figure 2 and 3 As shown, the preset direction can be the same as the groove direction (the direction indicated by the arrow in the figure); it can also be perpendicular to the groove direction, such as Figure 4 and 5 shown. The static properties of the first cell structure A and the second cell structure B are identical.

[0054] The emitter pad 101 (emitter PAD) is di...

Embodiment 2

[0066] like Figure 10 and 11As shown, on the basis of the first embodiment, the embodiment of the present disclosure provides another trench gate IGBT device, including a cell region, an emitter pad 201 (emitter PAD), a gate bus 202 and a gate pad 203 (gate PAD).

[0067] Wherein, the cell area includes several first cell structures A and second cell structures B, and the first cell structures A and the second cell structures B are alternately arranged along a preset direction, and the switch of the first cell structure A The delay time is greater than the switching delay time of the second cell structure B. like Figure 10 As shown, the preset direction can be the same as the groove direction (the direction indicated by the arrow in the figure); it can also be perpendicular to the groove direction, such as Figure 11 shown. The static properties of the first cell structure A and the second cell structure B are identical.

[0068] The emitter pad 201 (emitter PAD) is di...

Embodiment 3

[0078] like Figure 12 As shown, an embodiment of the present disclosure provides a trench gate IGBT device including a cell region, an emitter pad 301 (emitter PAD), a gate bus 302 and a gate pad 303 (gate PAD).

[0079] The cell area includes several first cell structures A, second cell structures B, third cell structures C, and fourth cell structures D. The first cell structure A, the second cell structure B, the third cell structure When the triple cell structure C and the fourth cell structure D are alternately arranged along the preset direction, the switching delay time of the first cell structure A > the switching delay time of the second cell structure B > the switching delay time of the third cell structure C delay time>switching delay time of the fourth cell structure D. The preset direction may be the same as the groove direction, or may be perpendicular to the groove direction. The static properties of the first cell structure A, the second cell structure B, the...

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Abstract

The invention provides a trench gate IGBT device. The trench gate IGBT device comprises a cellular region; the cellular region comprises a plurality of first cellular structures and second cellular structures which are alternately arranged, and the switching delay time of the first cellular structures is longer than that of the second cellular structures; and a gate pad is located at positions corresponding to the first cellular structures to compensate for a delay caused by gate signal transmission. According to the characteristics of the gate pad, an emitter pad and a gate bus, at least two cellular structures are arranged (alternately arranged) in a chip, and the gate pad is positioned above a first cellular structure with relatively long switching delay time, so that the difference of electrical properties between different cellular structures compensates for the transmission delay of gate signals in a device, the electrical stress on each part of the device is more balanced, the cellular switches at different positions can be synchronized, and the working reliability of the device is enhanced.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductor devices, in particular to a trench gate IGBT device. Background technique [0002] As a typical representative of power electronic devices, Insulated Gate Bipolar Transistor (IGBT) is widely used in modern power electronics. It not only has the advantages of high input impedance, low control power, simple driving circuit, high switching speed and low switching loss of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), but also has the advantages of bipolar Bipolar Junction Transistor (BJT) has the advantages of high current density, reduced saturation voltage, and strong current handling capability, so it is an ideal switching device in the field of power electronics. [0003] Among them, the trench gate IGBT is used in the medium and low voltage IGBT to improve the power level of the device because of its higher channel density. Generally speaking, by applying a continuo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/498H01L25/07
Inventor 梁利晓肖强朱利恒刘葳宁旭斌
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD