GaN power amplifier protection circuit

Abstract

The invention provides a GaN power amplifier protection circuit. The GaN power amplifier protection circuit comprises a power supply control circuit, a detection control circuit and a voltage supply circuit. The power supply control circuit comprises a field-effect tube and a control module, the control module is connected with the field-effect tube to control connection or disconnection of the field-effect tube, and a drain electrode of the field-effect tube is directly or indirectly connected to a power supply voltage input end. The source electrode of the field effect transistor is directly or indirectly connected to the drain electrode of the GaN power amplifier; the detection control circuit comprises a first diode, the negative electrode of the first diode is connected to the drain electrode of the GaN power amplifier, and the positive electrode of the first diode is directly or indirectly connected to the control module; the voltage supply circuit is connected to one end of the detection control circuit and is used for outputting a first voltage. The GaN power amplifier protection circuit can completely eliminate the problem of GaN hardware burnout when the gate voltage is not correctly loaded.

Description

technical field [0001] The present application relates to the field of circuit technology, in particular to a GaN power amplifier protection circuit. Background technique [0002] A power amplifier (Power Amplifier, PA) is one of the most important sub-modules in a base transceiver station (Base Transceiver Station, BTS) in mobile communication applications. With the large-scale application of the fourth generation (4G) mobile communication and the commercial use of the fifth generation (5G) mobile communication in the future, more and more high frequency bands (such as 2.7GHz, 3.5GHz, 4.9GHz, etc.) are in use or will be However, in these high frequency bands, the traditional laterally diffused metal oxide semiconductor (Laterally Diffused Metal Oxide Semiconductor, LDMOS) has many shortcomings, such as low efficiency, low power density, etc., while the newly mature GaN (Gallium Nitride, nitride Gallium) will have a wider range of applications and competitiveness in the fie...

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Problems solved by technology

However, when the GaN power amplifier fails to work normally, it will be burned immediately. The application found that the GaN power amplifier will cause the gate voltage to be incorrectly loaded and thus cannot work normally under the following circumstances: 1) The hardware timing control circuit is wrong, causing the drain voltage Devices that are applied to the GaN power amplifier or bias circuit before the gate voltage cannot output voltage, which will cause the GaN power amplifier to be burned directly; 2) The software control sequence is wrong, resulting in an error in the programmable output voltage, which can produce errors similar to the above 1) 3) Errors in hardware connection, such as poor soldering and product aging lead to poor or disconnected gate power supply, resulting in gate power-on, which can produce a power-on sequence similar to 1) Go wrong, burn out GaN power amplifiers

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