A large-area graphene-based flexible substrate and preparation method thereof

A vinyl-based flexible and large-area technology, applied in vacuum evaporation plating, coating, sputtering plating, etc., to achieve the effects of commercialization, excellent flexibility and bending resistance, and low operating costs

Active Publication Date: 2021-10-26
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In view of the problems existing in the prior art, the object of the present invention is to provide a large-area graphene-based flexible substrate and its preparation method, to solve the technology of how to use graphene as a substrate in a large area and that the surface of the graphene substrate is difficult to combine with other materials problems, thereby preparing a graphene-based flexible substrate with excellent comprehensive properties such as flexibility, bending resistance, electrical conductivity, thermal conductivity, and high temperature resistance.

Method used

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  • A large-area graphene-based flexible substrate and preparation method thereof
  • A large-area graphene-based flexible substrate and preparation method thereof
  • A large-area graphene-based flexible substrate and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0037] A Pt / Ag / large-area graphene composite flexible substrate, the preparation method of which is:

[0038] 1. Preparation of Large Graphene Flexible Films

[0039] The suspension of commercial graphene oxide was diluted to a concentration of 1 mg / mL with ultrapure water with a resistivity of 18.25 MΩ cm and centrifuged. Take the bottom 20% volume solution, dilute to 1 mg / mL, and centrifuge again to enter the next cycle. Repeat the above operation 7 times, take the final 20% volume solution at the bottom, concentrate it into a 10mg / mL graphene oxide gel, scrape it on the surface of the PET film, and after vacuum drying for 24 hours, a large graphene oxide film is formed on the PET film , to separate the large graphene oxide film from the PET film.

[0040] A large piece of graphene oxide film is placed in a graphite high-temperature furnace, first carbonized at 1300°C for 5 hours in an inert argon atmosphere, and then heat-treated at 2800°C for 2 hours. After cooling, it ...

Embodiment 2

[0050] A kind of ITO / Ag / large-area graphene composite flexible substrate, its preparation method is:

[0051] 1. Preparation of Large Graphene Flexible Films

[0052] The suspension of commercial graphene oxide was diluted to a concentration of 2 mg / mL with ultrapure water with a resistivity of 18.25 MΩ cm and centrifuged. Take the bottom 30% volume solution, dilute to 2mg / mL, and centrifuge again to enter the next cycle. Repeat the above operation 7 times, take the final 30% volume solution at the bottom, concentrate it into a 20mg / mL graphene oxide gel, scrape it on the surface of the PET film, and after vacuum drying for 24 hours, a large graphene oxide film is formed on the PET film , to separate the large graphene oxide film from the PET film.

[0053] A large piece of graphene oxide film is placed in a graphite high-temperature furnace, first carbonized at 1200°C for 2 hours in an inert argon atmosphere, and then heat-treated at 3000°C for 1 hour. After cooling, it is...

Embodiment 3

[0063] A FTO / Ag / large-area graphene composite flexible substrate, the preparation method of which is:

[0064] 1. Preparation of Large Graphene Flexible Films

[0065] The suspension of commercial graphene oxide was diluted to a concentration of 5 mg / mL with ultrapure water with a resistivity of 18.25 MΩ cm and centrifuged. Take the bottom 10% volume solution, dilute to 5mg / mL, and centrifuge again to enter the next cycle. Repeat the above operation 7 times, take the final 10% volume solution at the bottom, concentrate it into a 50mg / mL graphene oxide gel, scrape it on the surface of the PET film, and dry it in vacuum for 24 hours to form a large graphene oxide film on the PET film , to separate the large graphene oxide film from the PET film.

[0066] A large sheet of graphene oxide film is placed in a graphite high-temperature furnace, first carbonized at 1100°C for 3 hours in an inert argon atmosphere, and then heat-treated at 3500°C for 0.5 hour. After cooling, it is fu...

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Abstract

The invention discloses a large-area graphene-based flexible substrate and a preparation method thereof. The large-area graphene-based flexible substrate includes a large graphene layer, a buffer layer, and an upper intercalation layer arranged sequentially from bottom to top. The material of the buffer layer is metallic silver, and the material of the upper intercalation layer is metallic titanium. The graphene flexible substrate may further include an upper electrode layer, and the upper electrode is disposed on the surface of the upper intercalation layer. In the present invention, the upper electrode and the graphene are tightly connected together by adding a buffer layer and an upper intercalation layer. The design solves the problem that the graphene surface is difficult to bond with other materials. The atomic-level flatness of the substrate surface provides technical support for its further functionalization. The large-area graphene-based flexible substrate has great application prospects in the fields of smart skin, flexible wearable devices, and flexible electronic devices.

Description

technical field [0001] The invention relates to the field of substrates, in particular to a large-area graphene-based flexible substrate and a preparation method thereof. Background technique [0002] With the vigorous development of electronic and communication technologies, commercial portable electronic products (such as tablet computers, smart phones, etc.) are more and more closely connected with people's daily life. The development of contemporary big data, the application of cloud computing, communication and electronic products put forward the application requirements of flexibility, miniaturization, intelligence and high integration for the development of electronic components. However, for transistors and integrated circuit devices that tend to be miniaturized and high-density, the improvement of computing power is often at the cost of increasing the heat loss of equipment and chips, which will lead to a sharp decrease in product performance and reliability. [00...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCC23C14/16C23C14/165C23C14/18C23C14/185C23C14/24C23C14/35C23C14/5806
Inventor 周静王志青肖勇何大平沈杰陈文
Owner WUHAN UNIV OF TECH
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