Method for improving heteroepitaxial nucleation uniformity of diamond based on gridding structure electrode

Abstract

The invention discloses a method for improving the heteroepitaxial growth uniformity of diamond based on a gridding structure electrode, belongs to the field of chemical vapor deposition method heteroepitaxial single crystal diamond, and aims to solve the problem of poor large-area epitaxial growth uniformity of diamond. The method comprises the steps of 1, enabling a substrate to be located in the center of a sample table, and placing a gridding electrode on a cavity base; 2, vacuumizing the equipment; 3, carrying out a heating process; 4, turning on a direct-current bias power supply, and carrying out bias enhanced nucleation; 5, reducing the concentration of methane, and starting to carry out diamond epitaxial growth; and 6, carrying out photoetching graphical processing and growth on an epitaxial diamond film. In the bias voltage enhanced nucleation process, plasmas can be promoted to be gathered on the surface of the Mo electrode of the mesh structure through the Mo electrode of the gridding structure, positive ions in the plasmas are gathered above the composite substrate to form a glow layer, and the uniformity of epitaxial nucleation of the diamond is improved due to the fact that the uniformity of the glow layer is improved.

Description

technical field [0001] The invention belongs to the field of chemical vapor deposition method heterogeneous epitaxial single crystal diamond, in particular to a method for improving the nucleation uniformity of diamond heterogeneous epitaxy based on a grid structure electrode. Background technique [0002] Diamond is known as the "ultimate semiconductor", and single-crystal diamond is more competitive than crystalline diamond in terms of electrical properties due to the fact that there is no irregular grain boundary inside. However, to realize the application of single crystal diamond in high-precision semiconductor fields such as detectors, power electronic devices, and integrated circuits, the preparation of large-scale, high-quality self-supporting single-crystal diamond is essential. [0003] The artificial synthesis of single crystal diamond mainly includes two methods: high temperature and high pressure (HPHT) method and chemical vapor deposition (CVD) method. The siz...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problem of poor uniformity of diamond large-area epitaxial nucleation, and to provide a method to improve the uniformity of the plasma ball by inserting a grid structure insulating Mo ring electrode into the plasma, thereby changing the plasma distribution above the sample A method to further improve the uniformity of diamond heteroepitaxial nucleation

Images