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Production method applied to tubular PECVD equipment

A production method and technology of deposition equipment, which are applied in the direction of final product manufacturing, gaseous chemical plating, coating, etc., can solve the problems of improving, unfavorable production efficiency, complicated cleaning processes in the disassembly and assembly process of quartz tubes, etc., to simplify the process flow, The effect of improving production efficiency

Pending Publication Date: 2021-04-30
DEPOSITION EQUIP & APPL SHANGHAI LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this cleaning method belongs to off-line cleaning, which needs to soak the quartz tube or graphite boat in acid solution or water, which involves long-distance transportation, disassembly and assembly of quartz tube and complicated cleaning process, which is not conducive to the improvement of production efficiency

Method used

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  • Production method applied to tubular PECVD equipment
  • Production method applied to tubular PECVD equipment
  • Production method applied to tubular PECVD equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 6

[0141]The difference between the plasma chemical gas phase cleaning treatment and Example 2 is that the average thickness of the formed contaminated layer is 4.5 microns, and the length of the cleaning gas is 55 minutes.

Embodiment 7

[0142]The difference from the plasma chemical gas phase cleaning treatment of Example 7 and Example 3 is that the average thickness of the formed contaminated layer is 4.5 microns, and the length of the cleaning gas is 120 minutes.

Embodiment 8

[0143]The difference between the plasma chemical gas phase cleaning treatment of Example 8 and Example 4 is that the average thickness of the formed contaminated layer is 4.8 microns, and the length of the cleaning gas is 90 minutes.

[0144]In Examples 1-8 of the present invention, the carrier to be cleaned is to be cleaved, and the surface of the surface is contaminated, and the body color of the graphite has not been seen. After cleaning, the carrier surface is cleaned. Exhibit the body color of the graphite, indicating that the carrier has been efficient cleaning, and does not affect the performance of the medium film formed by the sedimentary process.

[0145]The inner wall of the tubular cleaning cavity of the present invention is preceded by quartz material before deposition treatment, which is transparent or transparent. After multiple deposition treatment, most of the contaminated layer is covered by most of the inner walls, it is presented in an opaque state. After cleaning, the...

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Abstract

The invention provides a production method applied to tubular PECVD equipment. The method comprises the following steps that a carrier in a tubular deposition cavity is driven to perform overturning motion through an overturning driving device, by the aid of a deposition control device, one of the two to-be-plated surfaces of a substrate contains a polycrystalline silicon film and a tunneling oxide film, any one of the two to-be-plated surfaces contains at least one of an anti-reflection film and a passivation film, and gas-phase cleaning treatment is performed on the carrier entering a tubular cleaning cavity through a cleaning control device arranged in the tubular cleaning cavity. According to the method, through the overturning motion, the carrier is not required to go in and out of the tubular deposition cavity repeatedly, and double-sided plating can be realized, so that the production efficiency is improved; the gas-phase cleaning treatment is performed on the carrier entering the tubular cleaning cavity through the cleaning control device arranged in the tubular cleaning cavity, the carrier is not required to be disassembled and assembled, and thus the production efficiency is further improved.

Description

Technical field[0001]The present invention relates to the field of crystalline silicon solar cell manufacturing techniques, and more particularly to a method of producing a tubular PECVD deposition apparatus.Background technique[0002]In the solar battery manufacturing process, the Plasma Enhancedchemical Vapor Deposition (PECVD) is formed in the surface of the crystalline silicon, and the light energy utilization can be improved by reducing the reflectivity of the light, and the reflection film is also reduced. It can serve as a passivation effect and provide long-term protection for the battery, thereby facilitating the promotion of photoelectric conversion efficiency. Therefore, the high-quality silicon nitride film has played a critical role in improving the performance and quality of the crystalline silicon solar cell.[0003]In the prior art, it is usually possible to place a few tens or even the wafer of the wafer in the quartz pipe, and PECVD deposition is performed by exciting...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/458C23C16/513H01L31/18
CPCC23C16/4584C23C16/513H01L31/1804Y02P70/50Y02E10/547
Inventor 黄志强戴虹王祥胡超陆勇费红材
Owner DEPOSITION EQUIP & APPL SHANGHAI LTD