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Method for forming semiconductor device structure

A device structure and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of reduced structure size, small semiconductor devices, and difficult manufacturing processes

Inactive Publication Date: 2021-05-04
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] As the size of the structure continues to shrink, the fabrication process is becoming more and more difficult
Therefore, how to form smaller and more reliable semiconductor devices is a challenge

Method used

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  • Method for forming semiconductor device structure
  • Method for forming semiconductor device structure
  • Method for forming semiconductor device structure

Examples

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Embodiment Construction

[0078] Different embodiments or examples provided below may implement different configurations of the present invention. The examples of specific components and arrangements are used to simplify the invention and not to limit the invention. For example, the statement that the first component is formed on the second component includes that the two are in direct contact, or there are other additional components interposed between the two instead of direct contact. In addition, numbers may be repeated in various examples of the present invention, but these repetitions are only for simplification and clarity of description, and do not mean that units with the same numbers in different embodiments and / or arrangements have the same corresponding relationship.

[0079] In addition, spatial relative terms such as "below", "beneath", "lower", "above", "above", or similar terms may be used to simplify describing the relationship between one element and another element in the drawings. ...

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PUM

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Abstract

A method for forming a semiconductor device structure is provided. The method includes providing a substrate, a first nanostructure, and a second nanostructure. The method includes forming an isolation layer over the base. The method includes forming a gate dielectric layer over the first nanostructure, the second nanostructure, the fin, and the isolation layer. The method includes forming a gate electrode layer over the first part. The method includes forming a spacer layer. The method includes removing the second part of the gate dielectric layer and the first upper portion of the isolation layer to form a space between the fin and the spacer layer. The method includes forming a source / drain structure in the space and over the first nanostructure and the second nanostructure.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor device structures, and in particular to double diamond-shaped source / drain structures. Background technique [0002] The semiconductor integrated circuit industry has experienced rapid growth. Technological advances in integrated circuit materials and design have resulted in each generation of integrated circuits having smaller and more complex circuits than the previous generation. However, these advances have also increased the complexity of processing and manufacturing integrated circuits. [0003] In bulk circuit evolution, functional density (the number of interconnect devices per chip area) typically increases as geometry size (the smallest component or line produced by the fabrication process employed) shrinks. A shrinking process is often beneficial for increasing throughput and reducing associated costs. [0004] As the size of the structure continues to shrink, the fabrication pr...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/06H01L29/08H01L29/78
CPCH01L29/0665H01L29/0847H01L29/6653H01L29/66795H01L29/785
Inventor 李东颖张开泰
Owner TAIWAN SEMICON MFG CO LTD