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PIN diode

A PIN diode and diode technology, applied in the semiconductor field, can solve the problems of poor heat dissipation performance of the PIN diode in the limiter circuit, high surface temperature of the device, burnout, etc., to improve the heat dissipation performance, improve the heat dissipation performance, and increase the circumference. Effect

Pending Publication Date: 2021-05-04
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, most of the PIN diode structures use a circular structure. The PIN diode with this structure does not perform well in heat dissipation in the limiter circuit, resulting in excessive surface temperature of the device, and even the risk of burning.

Method used

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Effect test

Embodiment

[0036] figure 1 It is a top view of the PIN diode of the present invention, figure 2 It is a cross-sectional view of the PIN diode of the present invention.

[0037] A PIN diode, which is a vertical structure, including a substrate 1, an N-type doped semiconductor 8, an N-region ohmic contact region 6, an intrinsic semiconductor 5, a P-type doped semiconductor 4, and a P-region ohmic layer stacked sequentially from bottom to top Contact zone 3.

[0038] The N-region interconnection metal 7 is connected to the N-region ohmic contact region 6, and is interconnected with an external circuit as the negative electrode of the diode.

[0039] The interconnection metal 2 in the P area is connected to the ohmic contact area 3 in the P area, and is interconnected with the external circuit as the positive electrode of the diode;

[0040] The P-region ohmic contact region 3 , the P-type doped semiconductor 4 , the intrinsic semiconductor 5 and the N-type doped semiconductor 8 are roun...

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Abstract

The invention provides a PIN diode which is of a vertical structure and comprises a substrate, an N-type doped semiconductor, an N-region ohmic contact region, an intrinsic semiconductor, a P-type doped semiconductor and a P-region ohmic contact region which are sequentially stacked from bottom to top. N-region interconnection metal is connected to the N-region ohmic contact region and serves as a negative electrode of the diode to be interconnected with an external circuit; P-region interconnection metal is connected to the P-region ohmic contact region and serves as a positive electrode of the diode to be interconnected with an external circuit; and at least one structure of the P-region ohmic contact region, the P-type doped semiconductor, the intrinsic semiconductor and the N-type doped semiconductor is a rounded rectangle. The diode is lower in impedance under a high-frequency condition, has better conductivity, solves the problem that a traditional PIN diode is not uniformly distributed in a heating area in a high-frequency circuit, and further improves the power resistance of the rounded rectangular PIN diode in the high-frequency circuit.

Description

technical field [0001] The invention belongs to the field of semiconductors, and in particular relates to a PIN diode. Background technique [0002] Diode is one of the earliest semiconductor devices, and its application is very wide. Especially in various electronic circuits, use diodes and resistors, capacitors, inductors and other components to make reasonable connections to form circuits with different functions, which can realize AC rectification, modulation signal detection, amplitude limiting and clamping, and power supply Voltage regulation and other functions. Diodes can be found in common radio circuits or in other household appliances or industrial control circuits. [0003] Phased array radar includes a transmitter and a receiver. With the development of semiconductor technology, especially the major breakthroughs in GaN power amplifier technology in recent years, the output power of the transmitter is increasing, while the output power of the receiver Sensiti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/868H01L29/06
CPCH01L29/868H01L29/0603H01L29/0615H01L29/0661H01L29/0688
Inventor 李世峰马丽筠雷骁王雷阳邬邦
Owner WUHAN UNIV
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