Multi-structure chemical mechanical polishing pad, and manufacturing method and application thereof

Abstract

The invention discloses a multi-structure chemical mechanical polishing pad and a manufacturing method and application thereof. The multi-structure chemical mechanical polishing pad comprises a main structure body, a surface-modified secondary structure body, a protective structure body, an upper connecting body which is used for bonding the main structure body and the surface-modified secondary structure body, and a lower connecting body which bonds the surface-modified secondary structure body and the protective structure body together. The surface-modified secondary structural body has excellent mechanical properties such as elongation at break and tensile strength, the thickness of the surface-modified secondary structural body is more uniform, and the bonding peel strength of the surface-modified secondary structural body and the connecting bodies is more excellent, so that the chemical mechanical polishing pad made of the surface-modified secondary structural body has better combination performance.

Description

technical field [0001] The invention relates to the technical field of chemical mechanical planarization (CMP), in particular to a composite multi-structure polishing pad for polishing and planarizing at least one of magnetic substrates, optical substrates and semiconductor substrates, a manufacturing method and the application. Background technique [0002] In the manufacturing process of large-scale integrated circuits and other precision electronic devices, as the size of semiconductor substrates such as silicon wafers increases, the scale of integration increases, the width of metal lines enters the nanometer scale, and the number of wiring layers increases, its impact on the substrate of semiconductor materials The requirements for planarization and the planarization of the wiring surface of each layer are gradually increasing. Undesired surface shapes and surface defects such as rough surfaces, agglomerated material, lattice damage, scratches, and contaminated layers ...

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Problems solved by technology

[0005] However, the method described in this patent has major defects

Specifically, the reduction of the thickness of the adhesive layer leads to the low bonding strength between the double-sided tape and the buffer layer structure and the bonding strength with the polishing disc. In the case of penetration and the presence of upper pressure and high-speed shear force, it will cause serious problems such as delamination and separation on the bonding surface of the traditional multi-structure polishing pad bonding layer

In actual production, there will be very huge losses

[0006] In view of the above-mentioned bonding surface of the traditional multi-structure polishing pad bonding layer, it is prone to serious problems such as delamination and separation when it is exposed to strong acid or strong alkaline polishing solution for a long time and under the conditions of high speed and pressure.

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