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A high-density mom capacitor structure and design method thereof

A capacitor structure and design method technology, applied in capacitors, electro-solid devices, circuits, etc., can solve the problems of semiconductor fractal capacitors deviating from design values ​​and fractal capacitor layout corners, etc., and achieve the effect of improving flexibility and process stability.

Active Publication Date: 2022-08-09
SHANGHAI JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the layout of fractal capacitors has many corners, and the capacitance value is greatly affected by the process. The actual capacitance value of semiconductor fractal capacitors often deviates from the design value

Method used

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  • A high-density mom capacitor structure and design method thereof
  • A high-density mom capacitor structure and design method thereof
  • A high-density mom capacitor structure and design method thereof

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Embodiment Construction

[0037] In order to make the purpose, advantages, technical solutions and embodiments of the present invention clearer, the present invention will be further described in detail below with reference to the embodiments and accompanying drawings, but the protection scope of the present invention should not be limited.

[0038] The design method of the high-density capacitor structure of the present invention, the high-density capacitor structure is a metal-oxide-metal (MOM) capacitor structure, and the method includes the following steps:

[0039] 1) First determine the minimum line width, minimum spacing, and minimum line end spacing of the CMOS process used (required by the design rules, use Cadence Virtuoso's Layout XL tool or any other circuit layout drawing tool, and meet the design rules. In the case of , draw two linear metal strips representing the upper and lower plates of the capacitor;

[0040] 2) Select the basic structural unit: select the direction of rotation of th...

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Abstract

A design method for a high-density capacitor structure, the high-density capacitor structure is a novel metal-oxide-metal (MOM) capacitor structure, the present invention can change the capacitance value by changing the number of turns, the number of groups and the reconstruction method, It has the characteristics of high scalability, high capacitance density and small lithography error. It is used in applications requiring high-density or high-precision integrated capacitors, such as switched capacitor circuits, sample-and-hold circuits, instrumentation amplifiers, etc.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a reconfigurable high-density MOM capacitor structure and a design method thereof. Background technique [0002] Capacitors are widely used in integrated circuits. With the continuous development of CMOS technology, the integrated circuit market is further diversified and specialized. Reconfigurable capacitor structures are required to obtain different capacitance values ​​to meet new integrated circuit market demands. Compared with MIM capacitors (Metal-Insulator-Metal, metal-dielectric-metal), MOM (Metal-Oxide-Metal, metal-oxide-metal) capacitors have good capacitance matching and process compatibility, and are widely used in in analog circuits and radio frequency circuits. [0003] The capacitance value of the traditional MOM capacitor structure is positively related to the area of ​​its plate. The capacitor consists of a finger-shaped first electrode and a second e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L49/02H10N97/00
CPCH01L28/60H01L28/75
Inventor 李永福黄家杰陆叶王青王国兴连勇
Owner SHANGHAI JIAOTONG UNIV