A method for preparing high-purity β-silicon carbide micro-nano powder by carbothermal reduction of high-temperature buried carbon

A technology of micro-nano powder and silicon carbide powder, applied in chemical instruments and methods, carbon compounds, inorganic chemistry, etc., can solve the problems affecting the purity of powder, high equipment requirements, difficult process control, etc., to ensure the output and purity , wide application prospects, the effect of avoiding sintering adhesion

Active Publication Date: 2022-06-21
ZHEJIANG SCI-TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The raw materials for the synthesis of β-silicon carbide micro-nano powder by self-propagating synthesis are relatively cheap, and the process is relatively simple, but this method will introduce impurities, which will affect the purity of the powder, the process is difficult to control, and it is easy to cause uneven reaction.
The β-silicon carbide micro-nano powder synthesized by sol-gel carbothermal reduction method has high purity, but the powder prepared by this method has high oxygen content and high cost; the powder synthesized by laser method and plasma method is Nano and submicron powders require high equipment, low output, and high cost; chemical vapor deposition has high cost, low output, and certain technical difficulties
At present, high-purity β-SiC micro-nano powder has problems such as high production cost, low β-phase content, impurities, and difficulty in stable mass production.

Method used

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  • A method for preparing high-purity β-silicon carbide micro-nano powder by carbothermal reduction of high-temperature buried carbon
  • A method for preparing high-purity β-silicon carbide micro-nano powder by carbothermal reduction of high-temperature buried carbon
  • A method for preparing high-purity β-silicon carbide micro-nano powder by carbothermal reduction of high-temperature buried carbon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] a. Using silicon powder and expandable graphite as raw materials, proportioning according to the ratio of Si:C=1:1.2, take 524g silicon powder and 259.2g expandable graphite to uniformly mix with a mechanical mixer, and mix the uniformly mixed silicon Put the carbon mixture into a corundum crucible to ensure that the material in the crucible is flat, then put graphite paper, refractory cotton, graphite paper, and graphite powder in sequence, and finally place a corundum cover on the top of the crucible;

[0037] b. Put the crucible in step a into a high-temperature sintering furnace, and the high-temperature sintering furnace controls the temperature stepwise, heats it to 1450° C., and keeps the temperature for 1.5 hours to obtain 783.2 g of silicon carbide powder containing impurities such as silicon dioxide and carbon.

[0038] c. Take 200g of the powder in step b and spread it in the corundum crucible, then put the corundum crucible into the muffle furnace, the muffle...

Embodiment 2

[0042] a. Using silicon powder and expandable graphite as raw materials, the ratio of Si:C=1:1.1 is carried out, and 524g silicon powder and 237.6g expandable graphite are uniformly mixed with a mechanical mixer, and the uniformly mixed silicon Put the carbon mixture into the corundum crucible to ensure that the material in the crucible is flat, then put graphite paper, refractory cotton, graphite paper, and graphite powder in sequence, and finally place a corundum cover on the top of the crucible;

[0043] b. Put the crucible in step a into a high-temperature sintering furnace, and the high-temperature sintering furnace controls the temperature stepwise, heats it to 1450° C., and keeps the temperature for 1.5 hours to obtain 761.6 g of silicon carbide powder containing impurities such as silicon dioxide and carbon.

[0044] c. Take 200g of the powder in step b and spread it in the corundum crucible, then put the corundum crucible into the muffle furnace, the muffle furnace tempe...

Embodiment 3

[0049] a. Using silicon powder and expandable graphite as raw materials, proportioning according to Si:C=1:1 ratio, take 524g silicon powder and 216g expandable graphite to uniformly mix with a mechanical mixer, and mix the uniformly mixed silicon carbon Put the mixture into a corundum crucible to ensure that the material in the crucible is flat, then put graphite paper, refractory cotton, graphite paper, and graphite powder in sequence, and finally place a corundum cover on the top of the crucible;

[0050] b. Put the crucible in step a into the high-temperature sintering furnace, and the high-temperature sintering furnace controls the temperature stepwise, heats it to 1450° C., and keeps the temperature for 1.5 hours to obtain 660.41 g of silicon carbide powder containing impurities such as silicon dioxide and carbon.

[0051] c. Take 200g of the powder in step b and spread it in the corundum crucible, then put the corundum crucible into the muffle furnace, the muffle furnace...

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Abstract

The invention discloses a method for preparing high-purity β-type silicon carbide micro-nano powder by carbothermal reduction of buried carbon at high temperature. Silicon powder and expandable graphite are proportioned and mixed evenly to obtain mixed raw materials; the mixed raw materials are packaged through the crucible and the covering layer composed of graphite paper, refractory cotton and graphite powder; In the sintering furnace, carbothermal reduction reaction occurs at high temperature; after the material is completely cooled, the crucible is taken out, and the covering layer is removed to obtain silicon carbide powder, which is put into the muffle furnace and calcined at high temperature in an oxygen atmosphere; Disperse by means of ball milling; the silicon carbide powder is pickled and washed with water to obtain β-silicon carbide micro-nano powder. In the present invention, the β-type silicon carbide micro-nano powder prepared by the high-temperature embedded carbon carbothermal reduction method is micro-nano level, and the first-level powder is purified and refined, and the yield is high, and the process is simple and the cost is low, and it is suitable for large-scale industrial production. .

Description

technical field [0001] The invention relates to a method for preparing high-purity beta-type silicon carbide micro-nano powder by carbothermic reduction of buried carbon at high temperature, in particular to a preparation technology of beta-type silicon carbide micro-nano powder, and belongs to the technical field of powder material preparation. Background technique [0002] Beta-silicon carbide micro-nano powder has good sintering performance and is an important raw material for the preparation of silicon carbide ceramics. It has a very broad application prospect in the fields of advanced structural ceramics and functional ceramics. The purity, particle size and crystal form of SiC powder have important effects on the quality of grown SiC single crystal and the sintering performance of ceramics. Therefore, the development of high-yield and high-purity β-type silicon carbide micro-nano powder preparation technology is of great significance for the preparation of high-perform...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/984B82Y40/00
CPCC01B32/984B82Y40/00C01P2002/72C01P2004/03
Inventor 陈建军杨佳豪朱明明郑旭鹏施嘉辉
Owner ZHEJIANG SCI-TECH UNIV
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