Photoelectric detection unit, photoelectric detection structure, photoelectric detector and preparation method thereof

Abstract

The invention relates to a photoelectric detection unit, a photoelectric detection structure, a preparation method of the photoelectric detection structure, a photoelectric detector and a preparation method thereof. The photoelectric detection unit comprises: a first substrate; a first structure which has a first doping type and is formed on the front surface of the first substrate; a second structure which is provided with a second doping type and is formed in the first structure, and the first structure is provided with a bottom wall and a side wall which surround the bottom surface and the side surface of the second structure; a first light processing layer which is provided with a concave-convex structure and is formed on the upper surface of the second structure; a heavily doped region which has the first doping type and is formed in the side wall, wherein the doping concentration of the heavily doped region is greater than that of the side wall; a first electrode which is electrically connected with the heavily doped region; and a second electrode electrically connected with the second structure. In the application, the first structure and the second structure form the optical detection layer, the first optical processing layer is formed on the optical detection layer, and the first optical processing layer reflects the incident light for multiple times to increase the optical path and improve the light absorption efficiency of the optical detection layer.

Description

technical field

[0001] The invention relates to the field of photoelectric detection, in particular to a photoelectric detection unit, a photoelectric detection structure and a method for preparing the photoelectric detection structure, a photodetector and a method for preparing the photodetector. Background technique

[0002] The photoelectric detection structure is the core structure of lidar, ToF (Time of Flight, time of flight) equipment, and depth imaging equipment. With the advancement of technology, the detection accuracy requirements of photoelectric detectors are also getting higher and higher. The factors affecting the detection accuracy include light absorption efficiency and internal noise interference of the photodetection structure. According to the positive correlation between the light absorption efficiency and the light propagation path, at present, the way to improve the light absorption efficiency is mainly to increase the thickness of the photodetection l...

Examples

no. 1 example

[0056] Such as figure 1 Shown is a schematic structural diagram of the photodetection unit in the first embodiment.

[0057]The photodetection unit includes a first substrate 100 and a photodetection layer 200 formed on the first substrate 100 . The photodetection layer 200 specifically includes a first structure 210 disposed on the first substrate 100 , and a second structure 220 formed in the first structure 210 . Wherein, the side surface and the bottom surface of the second structure 220 are wrapped by the first structure 210, and the top surface of the second structure 220 is not in contact with the first structure 210, that is, the first structure 210 has a bottom wall 211 in contact with the bottom surface of the second structure 220 and The sidewall 212 is in side contact with the second structure 220 .

[0058] The first photoprocessing layer 300 is disposed on the second structure 220, and the surface of the first photoprocessing layer 300 has a concave-convex stru...

no. 2 example

[0073] Such as figure 2 Shown is a schematic structural diagram of the photodetection unit in the second embodiment.

[0074] The difference between the second embodiment and the first embodiment is that, in the second embodiment, the bottom of the second doped region 222 extends to the bottom wall 211 and is in contact with the bottom wall 211, that is, the second doped region 222 runs through the first The doped region 221 is in contact with the bottom wall 211 , the first doped region 221 covers the side surface of the second doped region 222 , and the bottom wall 211 covers the bottom surface of the second doped region 222 .

no. 3 example

[0076] Such as image 3 Shown is a schematic structural diagram of the photodetection unit in the third embodiment.

[0077] The difference between the third embodiment and the first embodiment is that, in the third embodiment, the heavily doped region 230 may only include the first heavily doped region 231 .

technical field

[0001] The invention relates to the field of photoelectric detection, in particular to a photoelectric detection unit, a photoelectric detection structure and a method for preparing the photoelectric detection structure, a photodetector and a method for preparing the photodetector. Background technique

[0002] The photoelectric detection structure is the core structure of lidar, ToF (Time of Flight, time of flight) equipment, and depth imaging equipment. With the advancement of technology, the detection accuracy requirements of photoelectric detectors are also getting higher and higher. The factors affecting the detection accuracy include light absorption efficiency and internal noise interference of the photodetection structure. According to the positive correlation between the light absorption efficiency and the light propagation path, at present, the way to improve the light absorption efficiency is mainly to increase the thickness of the photodetection l...

Examples

no. 1 example

[0056] Such as figure 1 Shown is a schematic structural diagram of the photodetection unit in the first embodiment.

[0057]The photodetection unit includes a first substrate 100 and a photodetection layer 200 formed on the first substrate 100 . The photodetection layer 200 specifically includes a first structure 210 disposed on the first substrate 100 , and a second structure 220 formed in the first structure 210 . Wherein, the side surface and the bottom surface of the second structure 220 are wrapped by the first structure 210, and the top surface of the second structure 220 is not in contact with the first structure 210, that is, the first structure 210 has a bottom wall 211 in contact with the bottom surface of the second structure 220 and The sidewall 212 is in side contact with the second structure 220 .

[0058] The first photoprocessing layer 300 is disposed on the second structure 220, and the surface of the first photoprocessing layer 300 has a concave-convex stru...

no. 2 example

[0073] Such as figure 2 Shown is a schematic structural diagram of the photodetection unit in the second embodiment.

[0074] The difference between the second embodiment and the first embodiment is that, in the second embodiment, the bottom of the second doped region 222 extends to the bottom wall 211 and is in contact with the bottom wall 211, that is, the second doped region 222 runs through the first The doped region 221 is in contact with the bottom wall 211 , the first doped region 221 covers the side surface of the second doped region 222 , and the bottom wall 211 covers the bottom surface of the second doped region 222 .

no. 3 example

[0076] Such as image 3 Shown is a schematic structural diagram of the photodetection unit in the third embodiment.

[0077] The difference between the third embodiment and the first embodiment is that, in the third embodiment, the heavily doped region 230 may only include the first heavily doped region 231 .

Images