A trench gate power device and method of making the same

Abstract

Embodiments of the present application provide a trench gate power device and a method for fabricating the same. The method for fabricating the trench gate power device includes: forming a trench gate type MOS structure in a semiconductor substrate, the trench gate type MOS structure The structure includes a body region, a first trench, a second trench, a first insulating layer, a second insulating layer, a third insulating layer, a first polysilicon, a second polysilicon, a source region and a fourth insulating layer; depositing a stop layer and an interlayer dielectric layer in sequence; etching the interlayer dielectric layer, the stop layer and the first insulating layer to form a first contact hole; and etching the bottom of the first contact hole; and doping the surface of the body region around the first trench to form a contact region. With the solution in the present application, the lead-out of the electrodes can be realized by uniformly fabricating the conductive layer in the main unit area, thereby reducing the difficulty of process control, improving the yield and reducing the manufacturing cost.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and in particular, to a trench gate power device and a preparation method thereof. Background technique [0002] Power semiconductor devices are the basic electronic components for energy conversion and control in power electronic systems. The continuous development of power electronics technology has opened up a wide range of application fields for power semiconductor devices. Power semiconductor devices marked by IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) and IGBT (Insulated Gate Bipolar Transistor) are the mainstream in the field of power electronic devices today. [0003] The gate structure of MOSFET and IGBT includes trench type and planar type. The trench gate is usually formed by growing a gate oxide layer on the sidewall of the trench and filling it with polysilicon. This gate structure improves the utilization efficiency of the plane are...

AI Technical Summary

Problems solved by technology

[0005] In the embodiment of the present application, a trench gate power device and its preparation method are provided, which are used to solve the problems of difficult process control, reduced yield, and high manufacturing cost in the preparation of power semiconductor devices

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