Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of amorphous boron-doped graphite phase carbon nitride quantum dot, quantum dot prepared by same and application of quantum dot

A graphite-phase carbon nitride and amorphous technology, applied in the field of fluorescent materials, can solve the problems of dependent behavior, self-quenching excitation wavelength, low fluorescence quantum yield, etc., and achieve the promotion of exciton formation, high selectivity and sensitivity , Optimize the effect of optical performance

Active Publication Date: 2021-06-04
HUNAN UNIV
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Therefore, the technical problem to be solved by the present invention is to overcome the low fluorescence quantum yield, self-quenching and excitation wavelength-dependent behavior defects of CNQDs in the prior art, thereby providing an amorphous boron-doped graphite phase carbon nitride quantum Preparation method of dots (B-CNQDs)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of amorphous boron-doped graphite phase carbon nitride quantum dot, quantum dot prepared by same and application of quantum dot
  • Preparation method of amorphous boron-doped graphite phase carbon nitride quantum dot, quantum dot prepared by same and application of quantum dot
  • Preparation method of amorphous boron-doped graphite phase carbon nitride quantum dot, quantum dot prepared by same and application of quantum dot

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] A preparation method of amorphous boron-doped graphite phase carbon nitride quantum dots (B-CNQDs), comprising the following steps:

[0039] (1) Using citric acid as a carbon source, boric acid as a boron source, and urea as a nitrogen source, add an appropriate amount of deionized water and grind evenly to obtain a mixture;

[0040] (2) Put the mixture into an autoclave and heat up to 180°C for 2 hours;

[0041] (3) naturally cool to normal temperature to obtain a reaction solution, and mix the reaction solution with 4 times the volume of deionized water for ultrasonic treatment;

[0042] (4) The solution obtained in step (3) is collected by membrane filtration to collect the supernatant;

[0043] (5) Dilute the supernatant to obtain the amorphous B-CNQDs suspension.

[0044] Wherein, the mol ratio of citric acid, boric acid, and urea described in step (1) is 1:6:6.

[0045] Wherein, the heating rate described in step (2) is 5° C. / min.

[0046] Wherein, the time of...

Embodiment 2

[0050] A preparation method of amorphous boron-doped graphite phase carbon nitride quantum dots (B-CNQDs), comprising the following steps:

[0051] (1) Using citric acid as a carbon source, boric acid as a boron source, and urea as a nitrogen source, add an appropriate amount of deionized water and grind evenly to obtain a mixture;

[0052] (2) Put the mixture into an autoclave, heat up to 180°C and react for 1.5h;

[0053] (3) naturally cool to normal temperature to obtain a reaction solution, and mix the reaction solution with 4 times the volume of deionized water for ultrasonic treatment;

[0054] (4) The solution obtained in step (3) is collected by membrane filtration to collect the supernatant;

[0055] (5) Dilute the supernatant to obtain the amorphous B-CNQDs suspension.

[0056] Wherein, the mol ratio of citric acid, boric acid, and urea described in step (1) is 1:5:5.

[0057] Wherein, the heating rate in step (2) is 4°C / min.

[0058] Wherein, the time of ultraso...

Embodiment 3

[0062] A preparation method of amorphous boron-doped graphite phase carbon nitride quantum dots (B-CNQDs), comprising the following steps:

[0063] (1) Using citric acid as a carbon source, boric acid as a boron source, and urea as a nitrogen source, add an appropriate amount of deionized water and grind evenly to obtain a mixture;

[0064] (2) Put the mixture into an autoclave, heat up to 180°C and react for 2.5h;

[0065] (3) naturally cool to normal temperature to obtain a reaction solution, and mix the reaction solution with 4 times the volume of deionized water for ultrasonic treatment;

[0066] (4) The solution obtained in step (3) is collected by membrane filtration to collect the supernatant;

[0067] (5) Dilute the supernatant to obtain the amorphous B-CNQDs suspension.

[0068] Wherein, the mol ratio of citric acid, boric acid, and urea described in step (1) is 1:7:7.

[0069] Wherein, the heating rate in step (2) is 6° C. / min.

[0070] Wherein, the time of ultra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method of amorphous boron-doped graphite phase carbon nitride quantum dots, and belongs to the field of fluorescent materials. The method includes the following steps: (1) taking citric acid as a carbon source, boric acid as a boron source and urea as a nitrogen source, adding a proper amount of deionized water, and uniformly grinding the components to obtain a mixture; (2) putting the mixture into a high-pressure reaction kettle, heating the reaction kettle to 180 DEG C, and reacting for 1.5-2.5 hours; (3) naturally cooling the product to normal temperature to obtain a reaction solution, mixing the reaction solution with deionized water, and carrying out ultrasonic treatment; (4) filtering the solution obtained in the step (3) through a filter membrane, and collecting supernate; and (5) diluting the supernate, so as to obtain the amorphous B-CNQDs suspension. The invention also provides the amorphous boron-doped graphite phase carbon nitride quantum dot prepared by the method and application of the amorphous boron-doped graphite phase carbon nitride quantum dot in fluorescence imaging and heavy metal ion detection. The amorphous B-CNQDs have the advantages of high fluorescence quantum yield, no excitation wavelength dependence, strong fluorescence stability, and very high selectivity and sensitivity to Fe < 2 + > and Cd < 2 + > in a trace (ppb) range.

Description

technical field [0001] The invention relates to the field of fluorescent materials, in particular to a method for preparing amorphous boron-doped graphite-phase carbon nitride quantum dots, the prepared quantum dots and applications. Background technique [0002] Graphite phase carbon nitride quantum dots (CNQDs), as an attractive photoluminescence (PL) material, has great potential in the fields of fluorescence imaging and detection of heavy metal ions. However, three factors that seriously hinder the commercial application of CNQDs are: low fluorescence quantum yield, self-quenching, and excitation wavelength-dependent behavior. Contents of the invention [0003] Therefore, the technical problem to be solved by the present invention is to overcome the low fluorescence quantum yield, self-quenching and excitation wavelength-dependent behavior defects of CNQDs in the prior art, thereby providing an amorphous boron-doped graphite phase carbon nitride quantum Preparation me...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B21/082C09K11/65B82Y30/00B82Y40/00
CPCC01B21/0605C09K11/65B82Y30/00B82Y40/00C01P2004/04C01P2002/72C01P2002/82C01P2002/84
Inventor 黄桂芳李波胡望宇黄维清
Owner HUNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products