Ceramic part sand blasting method, ceramic part and manufacturing method of ceramic part

Abstract

The embodiment of the invention provides a ceramic part sand blasting method, a ceramic part and a manufacturing method of the ceramic part. The ceramic part sand blasting method comprises the following steps that S1, a sand blasting material is sprayed to the to-be-treated surface of the ceramic part through a nozzle, and meanwhile the nozzle and the ceramic part are controlled to move relatively till the whole to-be-treated surface is covered with the sand blasting material; the cycle index of S1 and related parameters of each S1 are set to be capable of controlling the surface roughness of the to-be-treated surface and reducing the surface damage of the ceramic part; the related parameters comprise at least one of the sand blasting material type, the injection pressure, the sand blasting mesh number, the sand blasting angle, the relative movement speed of the nozzle and the ceramic part, the nozzle diameter and the distance between a nozzle outlet and the to-be-treated surface. According to the ceramic part sand blasting method, the ceramic part and the manufacturing method of the ceramic part, damages such as cracks and the like can be reduced, and the surface roughness of the ceramic part is controlled, so that the requirements of different processes on the surface roughness of the ceramic part are met.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a sandblasting method for a ceramic part, a ceramic part and a manufacturing method thereof. Background technique [0002] In semiconductor processing equipment such as Inductive Coupled Plasma (ICP) etching equipment, the ceramic parts used are generally dielectric windows, nozzles, focus rings and the like. These ceramic parts are often distributed around the wafer. During the etching process, the surface of the ceramic parts will also be etched by plasma, resulting in changes in the surface structure of the ceramic parts and the formation of particles, which may fall on the wafer. On the round surface, the progress of etching is blocked, resulting in the formation of defects on the wafer surface, which directly affects the electrical index of the chip and the yield rate of the chip. [0003] In order to solve the above problems, the common practice is to roughen the...

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Problems solved by technology

[0005] However, because the existing sandblasting process does not pay attention to the relevant parameters affecting the surface roughness, this will cause the problem of excessive sandblasting and the inability to control the surface roughness. the horizontal line (such as figure 1 shown), gaps (such as figure 2 Shown), etc., resulting in cracks and other damages, these damages are easy to produce loose particles falling on the surface of the wafer during the etching process, causing defects on the surface of the wafer, and will shorten the service life of ceramic parts and increase the replacement frequency, resulting in increased usage costs

The inability to control the surface roughness will limit the use of ceramic parts and cannot meet the requirements of different processes for the surface roughness of ceramic parts

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