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Flexible planar detector PIN chip and manufacturing method and application thereof

A detector and planar technology, applied in the field of photodetectors, can solve problems such as inapplicable flexible devices

Active Publication Date: 2021-06-11
ZHONGSHAN DEHUA CHIP TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the GaInAs / InP PIN photodetector chip technology uses the epitaxial layer and chip technology on the rigid InP substrate, which is not suitable for flexible devices.

Method used

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  • Flexible planar detector PIN chip and manufacturing method and application thereof
  • Flexible planar detector PIN chip and manufacturing method and application thereof
  • Flexible planar detector PIN chip and manufacturing method and application thereof

Examples

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Embodiment Construction

[0076] In order to describe the technical content, achieved goals and effects of the present invention in detail, the following descriptions will be made in conjunction with the embodiments and accompanying drawings. The test methods used in the examples are conventional methods unless otherwise specified; the used materials, reagents, etc., are commercially available reagents and materials unless otherwise specified.

[0077] Embodiments of the present invention are: a flexible planar detector PIN chip and a preparation method thereof, comprising the following steps:

[0078] S1. Grow a Buffer layer (InP) on the surface of the InP substrate, and grow the following layers sequentially upward from the Buffer layer by MOCVD method: n-type InGaAs ohmic contact layer, n-type InP layer, InGaAs layer, p-type InP layer and p-type InGaAs ohmic contact layer, fabricated as figure 1 A prefab A as shown;

[0079] S2. Deposit SiO on the surface of the p-type InGaAs ohmic contact layer o...

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Abstract

The invention discloses a flexible planar detector PIN chip and a manufacturing method and application thereof. The chip sequentially comprises an N-surface electrode, an epitaxial wafer and a P-surface electrode from bottom to top, the epitaxial wafer sequentially comprises an n-type InGaAs ohmic contact layer, an n-type InP layer, an InGaAs layer, a p-type InP layer and a p-type InGaAs ohmic contact ring; and the P-type InGaAs ohmic contact ring is provided with a diffusion hole area. The flexible planar detector PIN chip is obtained by adopting a flexible chip process, the application scene is not limited to a conventional packaging form, and the flexible planar detector PIN chip can be applied to complex environments, such as various curved surfaces, flexible devices, etc.

Description

technical field [0001] The invention relates to the field of photodetectors, in particular to a flexible planar detector PIN chip and its manufacturing method and application. Background technique [0002] Metal-organic compound vapor phase epitaxy technology, referred to as MOCVD, is to use hydrogen carrier gas to send metal-organic compound vapor and non-metallic hydride into the heated substrate in the reaction chamber through multiple switches, and finally grow epitaxy on it through decomposition reaction. layers of advanced technology. Its growth process involves complex processes of fluid mechanics, gas phase and solid surface reaction kinetics and the combination of the two. Generally, its epitaxial growth is carried out under thermodynamic near-equilibrium conditions. [0003] Photodetectors are semiconductor devices that convert optical signals into electrical signals, and are used in optical fiber communications, computer networks, cable TV networks, and various ...

Claims

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Application Information

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IPC IPC(8): H01L31/105H01L31/18H01L27/14H01L27/144
CPCH01L31/105H01L31/18H01L27/14H01L27/144Y02P70/50
Inventor 杜伟王兵黄嘉敬何键华杨文奕
Owner ZHONGSHAN DEHUA CHIP TECH CO LTD
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