CMOS hybrid SR memristor latch circuit with asynchronous setting and resetting

Abstract

The invention discloses a CMOS hybrid SR memristor latch circuit with asynchronous setting and resetting. The CMOS hybrid SR memristor latch circuit comprises two modules, namely an SR memristor latch module and a memristor asynchronous setting and resetting function module. The SR memristor latch module comprises a first MOS tube T1, a second MOS tube T2, a third MOS tube T3, a fourth MOS tube T4, a fifth MOS tube T5, a sixth MOS tube T6, a first memristor M1, a first phase inverter N1, a second phase inverter N2 and a first resistor R1; the memristor asynchronous setting and resetting function module comprises a second memristor M2, a third memristor M3, a fourth memristor M4, a fifth memristor M5 and a third phase inverter N3; and the SR memristor latch module is formed by mixing a memristor and a CMOS, and the circuit has non-volatility. The memristor asynchronous setting and resetting function module is formed by an AND gate and an OR gate which are formed by memristors, and the circuit structure is simplified to the maximum degree through a memristor logic gate circuit, so that the number of components is reduced.

Description

technical field [0001] The invention belongs to the technical field of circuit design, and relates to a full-featured SR memristive latch circuit, in particular to a CMOS hybrid SR memristive latch circuit with asynchronous reset, which realizes level triggering and has Volatile features and an asynchronous set-reset function. Background technique [0002] Memristors were first proposed in 1971, and have received more and more attention as a new type of device. Memristors have the characteristics of non-volatility and hysteresis, which can be used in chaotic circuits, neural networks, digital logic circuits and other fields, especially storage circuits. The application of it has great advantages, and a series of achievements have been made, such as basic flip-flops of digital circuits, etc. However, the current design of memristors in flip-flop circuits is mostly improved based on traditional storage circuits. Although memristors are used, the number of devices in the enti...

AI Technical Summary

Problems solved by technology

However, the current design of memristors in flip-flop circuits is mostly improved based on traditional storage circuits. Although memristors are used, the number of devices in the entire circuit has not been greatly reduced. Memristors can make the circuit structure Simpler features are not reflected, and problems such as excessive power consumption caused by circuit complexity still exist. Therefore, the present invention makes full use of the characteristics of memristors, combines them with CMOS transistors, and adopts a new structure to design hybrid memristor storage circuits. , expand the application of memristors in memory circuits, and guide the way for the design of memristors in digital logic circuits

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