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A manufacturing method of a display backplane, a display backplane and a display device

A display backplane and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of high leakage current of switching transistors and increased power consumption of display backplanes, so as to reduce power consumption and The effect of leakage current

Active Publication Date: 2022-07-19
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention provides a method for manufacturing a display backplane, a display backplane and a display device, so as to solve the problem of high leakage current of switching transistors in the existing display backplane, which leads to increased power consumption of the display backplane

Method used

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  • A manufacturing method of a display backplane, a display backplane and a display device
  • A manufacturing method of a display backplane, a display backplane and a display device
  • A manufacturing method of a display backplane, a display backplane and a display device

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Embodiment 1

[0061] refer to figure 1 , showing a flowchart of a method for manufacturing a display backplane according to an embodiment of the present invention, which may specifically include the following steps:

[0062] Step 101, forming a first active layer and a second active layer on a base substrate; the materials of the first active layer and the second active layer are oxide semiconductors, and the first active layer is layer has a first channel region and a first non-channel region located on both sides of the first channel region, the second active layer has a second channel region and located on both sides of the second channel region the second non-channel region.

[0063] In this embodiment of the present invention, as figure 2 As shown, the base substrate 21 may be a rigid substrate, such as a glass substrate, etc., and the base substrate 21 may also be a flexible substrate, such as a PI (Polyimide, polyimide) substrate, and the like.

[0064] After the base substrate 2...

Embodiment 2

[0117] The embodiment of the present invention also provides a display backplane, which can be manufactured by using the manufacturing method of the display backplane described in the first embodiment. Specifically, the display backplane includes: a base substrate 21 ; a first active layer 22 and a second active layer 23 arranged on the base substrate 21 , the first active layer 22 and the second active layer 23 are The material is an oxide semiconductor, and the first active layer 22 has a first channel region 221 and a first non-channel region 222 on both sides of the first channel region 221, and the second active layer 23 has a second channel region 231 and the second non-channel region 232 on both sides of the second channel region 231; the first gate insulating layer 24 covering the first active layer 22 and the second active layer 23; provided on the first gate insulating layer The first gate 25 and the second gate 26 on 24, the orthographic projection of the first gate...

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Abstract

The invention provides a manufacturing method of a display backplane, a display backplane and a display device, and relates to the technical field of display. In the present invention, the first active layer and the second active layer are formed on the base substrate, the first gate insulating layer covering the first active layer and the second active layer is formed, and the first gate insulating layer is formed on the first gate insulating layer. a gate for performing ion implantation on the first non-channel region, the second non-channel region and the second channel region to reduce the Oxygen vacancy concentration, a second gate is formed on the first gate insulating layer. By performing ion implantation on the first non-channel region, the second non-channel region and the second channel region after the first gate is formed, the first non-channel region, the second non-channel region and the second non-channel region are occupied. The oxygen vacancies in the channel region reduce the concentration of oxygen vacancies in the first non-channel region, the second non-channel region and the second channel region, thereby reducing the leakage current of the switching transistor, thereby reducing the power consumption of the display backplane.

Description

technical field [0001] The present invention relates to the field of display technology, and in particular, to a manufacturing method of a display backplane, a display backplane and a display device. Background technique [0002] With the continuous development of display technology, the size of the display device is also increasing, correspondingly, the driving frequency will also continue to increase. Zinc Oxide, indium gallium zinc oxide) and other oxide semiconductor materials, the carrier mobility of which is 20 to 30 times that of amorphous silicon. Thin film transistors using oxide semiconductors as active layer materials can greatly improve the charge to the electrode. Discharge speed, improve pixel response speed, and achieve faster refresh rate. [0003] However, in the current display backplane, when an oxide semiconductor is used as the active layer material of the switching transistor and the driving transistor, the leakage current of the switching transistor i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L27/32H01L21/77
CPCH01L27/1225H01L27/127H10K59/1213H10K71/00H10K71/20H01L29/66969H01L29/7869H10K59/1201H01L21/02565H01L27/1248H01L29/78696H10K59/122H10K59/124
Inventor 王晶田宏伟刘明赵佳孟秋华韩子昂
Owner BOE TECH GRP CO LTD