SnO2 (Cu) single crystal film as well as preparation method and application thereof
A single crystal thin film and thin film technology, applied in the semiconductor field, can solve the problems of low Schottky barrier height, low reverse breakdown voltage, low rectification ratio, etc., achieve simple equipment and operation process, and increase reverse breakdown voltage, effect of high reverse breakdown voltage
Active Publication Date: 2022-03-04
HUBEI UNIV +1
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Problems solved by technology
[0004] In view of this, the present invention proposes a kind of SnO 2 (Cu) single crystal thin film and its preparation method and application in Schottky diode, to solve the lack of SnO in the prior art 2 Single crystal thin film, SnO 2 Schottky diodes have defects such as low Schottky barrier height, low rectification ratio, and low reverse breakdown voltage
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Embodiment 1
[0064] A kind of SnO of this embodiment 2 (Cu) The preparation method of monocrystalline thin film, comprises the following steps:
[0065] S1, provide SnO 2 (Cu) ceramic target;
[0066] S2, provide a substrate, utilize SnO 2 (Cu) Ceramic target prepares SnO on the surface of the substrate 2 (Cu) film layer;
[0067] S3, in an oxygen atmosphere, for SnO 2 (Cu) film is annealed, and finally the annealed SnO 2 (Cu) film undergoes O 2 Plasma treatment to get SnO 2 (Cu) single crystal thin film.
[0068] Specifically, in the embodiment of this application, SnO 2 The preparation method of (Cu) ceramic target includes: weighing SnO with a molar ratio of 99:1 2 powder and CuO powder in a ball mill tank to obtain a mixed powder, and then add ethanol with a total powder mass of 150% to the mixed powder for ball milling for 8 hours; put the ball-milled mixed powder in a vacuum drying oven at a temperature of 80°C and dry for 8 hours; Then, add 3% dehydrated alcohol of powder...
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Abstract
The invention discloses a SnO2 (Cu) single crystal film and a preparation method and application thereof, and relates to the technical field of semiconductors. The preparation method of the SnO2 (Cu) single crystal film provided by the invention comprises the following steps: preparing a SnO2 (Cu) ceramic target material; the method comprises the following steps: providing a substrate, and preparing a SnO2 (Cu) thin film layer on the surface of the substrate by using a SnO2 (Cu) ceramic target material; and annealing the SnO2 (Cu) thin film in an oxygen atmosphere, and finally carrying out O2 plasma treatment on the annealed SnO2 (Cu) thin film. The SnO2 (Cu) single-crystal thin film is used as a semiconductor layer to prepare the Schottky diode, Schottky contact of the metal electrodes and the stannic oxide single-crystal thin film can be achieved, the designed annular electrode can adjust the magnitude of leakage current by adjusting the distance between the two metal electrodes, and therefore the reverse withstand voltage value of the diode is adjusted. The SnO2 (Cu) Schottky diode prepared by the invention has high Schottky barrier height, good rectification characteristic and high reverse breakdown voltage.
Description
technical field [0001] The invention relates to the field of semiconductor technology, in particular to a SnO 2 (Cu) single crystal thin film and its preparation method and application, especially SnO 2 Application of (Cu) single crystal thin films as semiconductor layers in Schottky diodes. Background technique [0002] SnO 2 As a typical direct bandgap wide bandgap semiconductor material, it has a bandgap width of 3.6eV, high transparency to visible light, and abundant earth reserves. Compared with some other wide bandgap semiconductor materials SnO 2 It has many advantages such as more stable physical and chemical properties, higher mechanical strength and greater electron mobility, and has great application potential in the field of semiconductor power devices. For a long time, metals with high work function and SnO 2 The type of contact tends to be ohmic contact, even metal with SnO 2 A Schottky contact is formed, but there are still problems such as low Schottky ...
Claims
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IPC IPC(8): C30B29/16C30B1/04C23C14/08C23C14/28C23C14/58H01L29/872
CPCC30B29/16C30B1/04C23C14/28C23C14/5806C23C14/5853C23C14/086H01L29/872Y02P70/50
Inventor 何云斌黎明锴刘凤新卢寅梅陈剑尹向阳郭启利李永昌刘伟邓云
Owner HUBEI UNIV