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A kind of highly stable oxide semiconductor thin film transistor and its preparation method

A technology of oxide semiconductors and thin film transistors, which is applied in semiconductor/solid-state device manufacturing, transistors, semiconductor devices, etc., can solve problems such as threshold voltage drift of thin film transistors, affecting circuit reliability and stability, threshold voltage drift, etc., to improve Electrical stability, easy control of preparation conditions, and the effect of reducing the concentration of oxygen vacancies

Active Publication Date: 2020-04-03
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the threshold voltage drift of the oxide thin film transistor will occur after a long time of operation, which seriously affects the reliability and stability of the circuit with the thin film transistor as the device. One of the important reasons for the threshold voltage drift of the thin film transistor is the oxide Oxygen vacancies at the interface between the active layer and the insulating layer, oxygen vacancies will trap carriers in the channel, resulting in a shift in the threshold voltage of the thin film transistor

Method used

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  • A kind of highly stable oxide semiconductor thin film transistor and its preparation method
  • A kind of highly stable oxide semiconductor thin film transistor and its preparation method

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Embodiment 1

[0023] A method for preparing a highly stable oxide semiconductor thin film transistor, comprising the following steps:

[0024] Step 1: Select an n-type heavily doped silicon substrate as the substrate and at the same time as the gate electrode; before use, the substrate needs to be cleaned. The cleaning process is: soak the substrate in hydrofluoric acid to remove the surface oxide layer, and then put Into the ultrasonic wave, wash with acetone, absolute ethanol and deionized water for 15 minutes respectively to remove the pollutants on the substrate, and then blow dry with nitrogen;

[0025] Step 2: Prepare an insulating layer on the substrate by magnetron sputtering, the insulating layer is Al doped with boron 2 o 3 insulating film; the Al 2 o 3 The molar ratio of boron ions to aluminum ions in the insulating film is 10:100, and the Al 2 o 3 Insulating film thickness is 150 nanometers, and in described magnetron sputtering method, sputtering power is 120W, and sputter...

Embodiment 2

[0030] A method for preparing a highly stable oxide semiconductor thin film transistor, comprising the following steps:

[0031] Step 1: Select ITO conductive glass as the substrate, and at the same time as the grid electrode; before use, the substrate needs to be cleaned. The cleaning process is as follows: put the substrate into the ultrasonic wave and wash it with acetone, absolute ethanol and deionized water for 15 minutes respectively , to remove contaminants on the substrate, and then blow dry with nitrogen;

[0032] Step 2: Prepare an insulating layer on the substrate by magnetron sputtering, the insulating layer is Al doped with silicon 2 o 3 insulating film; the Al 2 o 3 The molar ratio of silicon ions to aluminum ions in the insulating film is 10:100, and the Al 2 o 3 Insulating film thickness is 150 nanometers, and in described magnetron sputtering method, sputtering power is 120W, and sputtering air pressure is 2Pa, and feeding gas is the mixed gas of oxygen a...

Embodiment 3

[0037] A method for preparing a highly stable oxide semiconductor thin film transistor, comprising the following steps:

[0038] Step 1: Select a heavily doped silicon substrate as the substrate and at the same time as the gate electrode; before use, the substrate needs to be cleaned. The cleaning process is: soak the substrate in hydrofluoric acid to remove the surface oxide layer, and then put it into ultrasonic Wash with acetone, absolute ethanol and deionized water for 15 minutes in order to remove the pollutants on the substrate, and then blow dry with nitrogen;

[0039] Step 2: Prepare an insulating layer on the substrate by magnetron sputtering, the insulating layer is boron-doped Y 2 o 3 insulating film; the Y 2 o 3 The molar ratio of boron ions and yttrium ions in the insulating film is 5:100, and the Y 2 o 3 Insulation film thickness is 50 nanometers, and in described magnetron sputtering method, sputtering power is 100W, and sputtering air pressure is 10Pa, and...

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Abstract

A high-stability oxide semiconductor thin film transmitter comprises a substrate, a grid electrode, an insulation layer, an active layer and a source-drain electrode, wherein the insulation layer is aboron- or silicon-doped insulation film, and the active layer is a boron- or silicon-doped semiconductor thin film. A fabrication method of the high-stability oxide semiconductor thin film transmitter comprises the steps of selecting a heavy-doping silicon substrate or ITO conductive glass to be used as the substrate and simultaneously used as the grid electrode; fabricating the insulation layeron the substrate by a magnetron sputtering method, wherein the insulation layer is the boron- or silicon-doped insulation film; fabricating the active layer on the insulation layer by a magnetron sputtering method, wherein the active layer is the boron- or silicon-doped semiconductor thin film; and fabricating a metal Al thin film, used as the source-drain electrode, on the active layer by a thermal evaporation coating method. With the doping of boron (B) or silicon (Si) easy to combine with oxygen vacancy, the oxygen vacancy at an interface between the insulation layer and the active layer isreduced, the stability of the thin film transistor is improved, so that the stability and the reliability of the device are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a highly stable oxide semiconductor thin film transistor and a preparation method thereof. Background technique [0002] Thin film transistors are the core components of active matrix liquid crystal display (AMLCD) and organic light emitting diode display (AMOLED), which play a vital role in the performance of display devices. With the continuous emergence of new materials, continuous improvement of processes, and continuous innovation of structures, many thin film transistors with high mobility and high current switching ratio are expected to be applied to new active display array substrates. When the active matrix display device is working, the selection transistor and the driving transistor will be subjected to a long-term electrical bias, and this bias will vary depending on the specific working environment, so whether the thin film transistor can Maintaining s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/227H01L29/24H01L29/51H01L29/786H01L21/34
CPCH01L29/0684H01L29/227H01L29/24H01L29/517H01L29/66969H01L29/7869
Inventor 张新安刘献省郑海务李爽张朋林张伟风
Owner HENAN UNIVERSITY