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Method for increasing bismuth layer structure piezoelectricity ferroelectric ceramic material high-temperature resistivity

A technology of ferroelectric ceramics and bismuth layer structure, applied in piezoelectric/electrostrictive/magnetostrictive devices, circuits, electrical components, etc., to achieve good high-temperature resistivity, inhibit grain growth, and reduce anisotropy Effect

Inactive Publication Date: 2010-05-19
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Grain orientation techniques that align grains—such as template grain growth (TGG), hot forging (HF), hot pressing (T Kimura, Application of texture engineering to piezoelectric ceramics[J], J Ceram Soc Jpn , 2006, 114(1): 15), casting (Li Yongxiang et al., CN 1562874A, 2005) and other methods have improved the piezoelectric and ferroelectric properties of the material to varying degrees, but the resistance temperature characteristics and high temperature resistivity still need to be further improved. improve

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Analytical pure strontium carbonate (SrCO 3 ), barium carbonate (BaCO 3 ), calcium carbonate (CaCO 3 ), bismuth oxide (Bi 2 o 3 ), titanium oxide (TiO 2 ), lanthanum oxide (La 2 o 3 ), neodymium oxide (Nd 2 o 3 ), cerium oxide (CeO 2 ), vanadium oxide (V 2 o 5 ), tungsten oxide (WO 3 ), niobium pentoxide (Nb 2 o 5 ) as raw material, according to formula (Ca, Sr, Ba) [Bi 3.9 (La, Nd, Ce) 0.1 ]Ti 3.97 (V, W, Nb) 0.03 o 15 Calculate and weigh the raw materials, and the molar quantities of various substances are listed in Table 1. Using distilled water as the ball milling medium, ball milling, drying, and passing through a 60-mesh sieve. Then the mixture was airtightly calcined at 850°C for 3 hours. The pre-fired powder is pulverized with a planetary ball mill for 10 hours, dried, and passed through an 80-mesh sieve, and the powder is pre-pressed with a pressure of 10 MPa, and then the powder is pressed into a diameter of 15 mm with a cold isostatic pres...

Embodiment 2

[0037] Analytical pure strontium carbonate (SrCO 3 ), barium carbonate (BaCO 3 ), calcium carbonate (CaCO 3 ), bismuth oxide (Bi 2 o 3 ), titanium oxide (TiO 2 ), lanthanum oxide (La 2 o 3 ), neodymium oxide (Nd 2 o 3 ), cerium oxide (CeO 2 ), vanadium oxide (V 2 o 5 ), tungsten oxide (WO 3 ), niobium pentoxide (Nb 2 o 5 ) as raw material, according to formula (Ca, Sr, Ba) [Bi 3.7 (La, Nd, Ce) 0.3 ]Ti 3.95 (V, W, Nb) 0.05 o 15 Calculate and weigh the raw materials, and the molar quantities of various substances are listed in Table 2. Using distilled water as the ball milling medium, ball milling, drying, and passing through a 80-mesh sieve. Then the mixture was airtightly calcined at 850°C for 3 hours. Crush the pre-fired powder for 6 hours, dry it, pass through a 120-mesh sieve, pre-press the powder with a pressure of 10MPa, and then press the powder into a diameter of 15mm and a thickness of about 2mm with a cold isostatic press under a pressure of 200MPa...

Embodiment 3

[0050] Analytical pure strontium carbonate (SrCO 3 ), barium carbonate (BaCO 3 ), calcium carbonate (CaCO 3 ), bismuth oxide (Bi 2 o 3 ), titanium oxide (TiO 2 ), lanthanum oxide (La 2 o 3 ), neodymium oxide (Nd 2 o 3 ), cerium oxide (CeO 2 ), vanadium oxide (V 2 o 5 ), tungsten oxide (WO 3 ), niobium pentoxide (Nb 2 o 5 ) as raw material, according to formula (Ca, Sr, Ba) [Bi 3.5 (La, Nd, Ce) 0.5 ] Ti 3.9 (V, W, Nb) 0.1 o 15 Calculate and weigh the raw materials, and the molar quantities of various substances are listed in Table 3. Using distilled water as the ball milling medium, ball milling, drying, and passing through a 80-mesh sieve. Then the mixture was sealed and pre-fired at 850°C for 2 hours. Crush the pre-fired powder for 4 hours, dry it, pass through an 80-mesh sieve, pre-press the powder with a pressure of 10 MPa, and then press the powder into a diameter of 15 mm and a thickness of about 2 mm with a cold isostatic press under a pressure of 250...

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Abstract

The invention discloses a method for enhancing high-temperature resistivity of piezoelectric ferroelectric ceramic materials with bismuth layer structure. The method comprises the steps: ingredient, material pretreatment and multi-step sintering; a chemical formula of the piezoelectric ferroelectric ceramic materials with bismuth layer structure is that: A (Bi4-xLnx)Ti4-yByO15, wherein, the A is at least one of the elements Ca, Sr and Ba; the B at least one of the elements V, W and Nb; the X is more than 0 and less than or equal to 0.5, the Y more than 0 and less than or equal to 0.1; the multi-step sintering is that: the temperature for sintering is enhanced to between 1100 and 1200 DEG C from the room temperature at a speed of 2 to 5 DEG C per minute, then lowered to between 1000 to 1100DEG C within 1 to 5 minutes, next cooled to 500 DEG C at the speed of 5 DEG C per minute, and finally cooled with a furnace naturally. The piezoelectric ferroelectric ceramic materials with bismuth layer structure of the invention can have high-temperature resistivity: 1.0 multiplied by 10< 7 > to 2.5 multiplied by 10< 9 >Omega m. The temperature can be applied to the field of high-temperature ofdielectric and piezoelectric ceramics.

Description

technical field [0001] The invention relates to a functional ceramic material, in particular to a method for improving the high-temperature resistivity of a bismuth layer-structured piezoelectric ferroelectric ceramic material. Background technique [0002] With the development of electronic technology, the operating environment of electronic equipment and electronic components is becoming more and more severe, and the operating temperature is getting higher and higher. Piezoelectric ferroelectric materials used at high temperatures must have a high Curie temperature so that no structural phase transition occurs at higher temperatures and affect their piezoelectricity, and their piezoelectric parameters must remain stable over a wide temperature range to Ensure that the piezoelectric device works normally. Bismuth-structured ferroelectric materials (BLSF) are a class of potential high-temperature lead-free piezoelectric ferroelectric materials, which have high Curie tempera...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/462C04B35/622H01L41/187H10N30/853
Inventor 何新华黎卓华凌志远
Owner SOUTH CHINA UNIV OF TECH