Preparation method and application of InOC thin films
A thin film and reaction chamber technology, which is applied in the field of preparation of carbon-doped indium oxide thin films, can solve the problem that pulsed laser deposition cannot achieve large-area growth and large-area uniformity, chemical vapor deposition has high deposition temperature, and it is difficult to precisely control the composition of thin films. and other problems, to achieve the effect of good field effect electron mobility, reduction of carrier concentration, and reduction of oxygen vacancy concentration
Inactive Publication Date: 2017-12-15
FUDAN UNIV
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Problems solved by technology
However, the magnetron sputtering method is difficult to achieve precise control of the film composition, and the prepared film has a higher concentration of oxygen vacancies; pulsed laser deposition cannot achieve large-area growth and large-area uniformity; chemical vapor deposition requires high deposition temperature
Therefore, these methods have their own shortcomings, and it is difficult to be widely used in large-area flexible displays.
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[0028] The invention provides a kind of preparation method of InOC film, comprises the following steps:
[0029] Step 1, place a substrate suitable for InOC film growth in the reaction chamber, the substrate can be silicon wafer, glass, polymer, or covered with SiO 2 、Si 3 N 4 、Al 2 o 3 Substrates such as dielectric films. Then, the substrate temperature is heated to 150° C.-180° C. as the temperature condition for growing the InOC thin film. In order to allow InCp to generate enough vapor, the bottle containing InCp needs to be heated, and the heating temperature is 80°C to 150°C. Sheng has H 2 o 2 The bottle of the solution does not need to be heated, and H can be generated at room temperature 2 o 2 steam.
[0030] Step 2, injecting InCp vapor into the reaction chamber in a pulsed manner, and the pulse time is 50-240ms. After the pulse operation, let the InCp vapor stay in the chamber for 5-15 seconds. The purpose is to make InCp molecules fully adsorb and react ...
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The invention discloses a preparation method of InOC thin films. The preparation method comprises the following steps that firstly, a substrate used for growing of the InOC thin films is placed in a reaction cavity and heated; secondly, and InOC steam is injected into the reaction cavity in a pulsing mode and stays in the cavity for a period of time after pulsing operation; thirdly, inert gas is injected into the reaction cavity; fourthly, H2O2 steam is injected into the reaction cavity with the inert gas as carrier gas in a pulsing mode and stays in the cavity for a period of time after pulsing operation; fifthly, inert gas is injected into the reaction cavity; and sixthly, the steps from 2 to 5 are repeated, so that the InOC thin films of different thicknesses are obtained. The prepared InOC thin films are low in process temperature and oxygen vacancy concentration, and have good uniformity, surface evenness and capability of being controllable in nanometer scale thickness.
Description
technical field [0001] The invention relates to the field of preparation of thin films of semiconductor materials, in particular to a preparation method and application of carbon-doped indium oxide (InOC) thin films. Background technique [0002] With the rapid development of flat panel display technology, people put forward higher requirements for high-performance system panel (SoP) in the fields of transparent display, flexible display and three-dimensional display. As a key component of SoP, the characteristics of thin film transistor (TFT) are very important. It not only needs to have good device performance parameters, but also needs to have the advantages of visible light transparency and low manufacturing process temperature. Indium oxide (In 2 o 3 ) as a metal oxide semiconductor material, it has a larger forbidden band width and higher electron mobility than conventional amorphous silicon, and is transparent to visible light. Therefore, In 2 o 3 As a TFT active...
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IPC IPC(8): C23C16/30C23C16/455H01L29/786
Inventor 丁士进马倩刘文军张卫
Owner FUDAN UNIV