Terahertz wire-skipping-free microstrip probe monolithic and system-level circuit integrated packaging structure

A technology of microstrip probe and packaging structure, which is applied in the direction of circuits, electrical components, connecting devices, etc., can solve the problems of inability to guarantee repeatability and consistency, high transmission loss, etc., so as to save chip thinning process and reduce loss , Improve the effect of packaging performance

Active Publication Date: 2021-06-18
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are many forms of conversion between rectangular waveguide and planar transmission line. The commonly used ones are mainly waveguide-ridge waveguide-microstrip transition, waveguide-microstrip probe transition and waveguide-probe-microstrip transition. These traditional microwave transition structures are difficult to integrate with on-chip circuits. The test pads (pads) are directly interconnected, and in the millimeter wave and terahertz frequency bands, after interconnection with gold wire bonding wires, high transmission loss will be introduced, and good repeatability and consistency cannot be guaranteed.

Method used

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  • Terahertz wire-skipping-free microstrip probe monolithic and system-level circuit integrated packaging structure
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  • Terahertz wire-skipping-free microstrip probe monolithic and system-level circuit integrated packaging structure

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Embodiment Construction

[0037] In order to facilitate those skilled in the art to understand the technical content of the present invention, the content of the present invention will be further explained below in conjunction with the accompanying drawings.

[0038] Such as figure 2 and image 3 As shown, the terahertz non-jumping microstrip probe monolithic and system-level circuit interconnection integrated package in this embodiment includes a lower cavity 1, an upper cavity 2, a shielding cavity 3 formed between the upper and lower cavities, and An integrated microstrip probe interconnection and packaging structure 4 , the upper cavity 2 is assembled on the lower cavity 1 to form a rectangular waveguide cavity 31 , a microstrip circuit shielding cavity 32 and a monolithic circuit shielding cavity 33 .

[0039] Such as image 3 , Figure 4 and Figure 5As shown, the microstrip probe interconnection packaging integrated structure 4 in this embodiment includes a microstrip probe 441, a probe imp...

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Abstract

The invention discloses a terahertz wire-skipping-free microstrip probe monolithic and system-level circuit integrated packaging structure, and is applied to the technical field of circuit packaging, and aims to solve the problem of high transmission loss due to the adoption of gold wire bonding wire interconnection in the prior art. A hole-shaped interconnection structure is manufactured by puncturing a Pi dielectric layer above each chip pad, the test pad is connected with a micro-strip line, a traditional gold wire bonding jumper structure is not needed, the micro-strip line is connected with an interconnection matching micro-strip branch knot, and the micro-strip line is used for correcting impedance mismatch introduced by the hole-shaped interconnection structure, and due to the fact that the hole-shaped interconnection structure and the interconnection matching micro-strip branch knot are both manufactured through the high-precision metal atom sputtering technology, good consistency and repeatability can be ensured.

Description

technical field [0001] The invention belongs to the technical field of circuit packaging, and in particular relates to a terahertz monolithic and system-level circuit technology. Background technique [0002] In a broad sense, terahertz waves refer to electromagnetic waves with frequencies ranging from 100GHz to 10THz (corresponding to a wavelength of 3mm to 30um). Since terahertz waves are located in the transition zone between macroelectronics and microphotonics, they have many unique properties. Compared with microwave and millimeter waves, terahertz waves have the characteristics of high frequency and short wavelength. Therefore, terahertz waves have stronger beam directionality, higher resolution, and greater information capacity, and electronic devices can be made smaller. Compared with light waves, terahertz waves have stronger penetrability, can be applied to environments such as rain, fog, and smoke-filled battlefields, and have the ability to work around the clock;...

Claims

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Application Information

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IPC IPC(8): H01P5/107
CPCH01P5/107
Inventor 王志刚余波王俊辉延波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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