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Silicon-based low-dielectric microwave dielectric ceramic and preparation method thereof

A microwave dielectric ceramic and silicon-based technology, applied in the field of microwave dielectric ceramics, can solve the problems of increased system loss and heat generation, and poor system stability, and achieve the effects of stable performance, low dielectric constant, and excellent quality factor.

Active Publication Date: 2021-06-22
WENZHOU ADVANCED MFG TECH INST OF HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As the operating frequency of communication equipment continues to increase, the signal delay phenomenon will become more obvious, the system loss and heat will also increase, and the system stability will gradually deteriorate

Method used

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  • Silicon-based low-dielectric microwave dielectric ceramic and preparation method thereof
  • Silicon-based low-dielectric microwave dielectric ceramic and preparation method thereof
  • Silicon-based low-dielectric microwave dielectric ceramic and preparation method thereof

Examples

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Embodiment 1～5

[0035] A microwave dielectric ceramic, its preparation method is carried out according to the following steps:

[0036] (1) Analytical pure BaCO 3 , CaCO 3 , SrCO 3 and SiO 2 After mixing according to the stoichiometric ratio, use zirconium balls as the medium and deionized water as the dispersant, and use a ball mill to mix and stir the powder for 5 hours at a speed of 360r / min; dry the obtained slurry at 1050°C Pre-fired for 5 hours to obtain a pre-fired ceramic powder;

[0037] (2) The pre-fired ceramic powder obtained in step (1) is subjected to wet ball milling again, the dispersant is deionized water, and after drying, 8 wt% polyvinyl alcohol (PVA) binder is added to the dried powder Granulate, and press it into a cylindrical green sample with a thickness-to-diameter ratio of 0.4 to 0.6 under a pressure of 150 MPa; after tableting, sinter in air at 1150°C to 1250°C for 5 hours to obtain the Microwave dielectric ceramics.

[0038] Table 1 Examples 1-5, sintering tem...

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Abstract

The invention belongs to the technical field of microwave dielectric ceramics, and particularly relates to a silicon-based low-dielectric microwave dielectric ceramic and a preparation method thereof. The preparation method comprises the following steps: a compound with a chemical general formula of xBaO-yMO-zSiO2 (M = Ca, Sr; 0 <x<=1.0; 1.0 <= y <=2.0; 1.0 <= z <= 3.0) is used for preparing a microwave dielectric ceramic material. The ceramic has a low dielectric constant (epsilon r = 7.3-11.0), an excellent quality factor (Q * f = 5370-40500 GHz) and a wide sintering temperature range (1150-1250 DEG C), meanwhile, the microwave dielectric ceramic has a negative temperature coefficient of resonance frequency (-76.6 ppm / DEG C<=tau f <=-36.3 ppm / DEG C). Due to the low sintering temperature and the excellent quality factor of the microwave dielectric ceramic, the silicon-based low dielectric microwave dielectric material can be applied to the field of BME-MLCC.

Description

technical field [0001] The invention belongs to the technical field of microwave dielectric ceramics, and more specifically relates to a silicon-based low dielectric microwave dielectric ceramic and a preparation method thereof. Background technique [0002] Microwave dielectric ceramics refer to ceramic materials used as dielectrics in microwave frequency band (300MHz-300GHz) circuits. As the operating frequency of communication equipment continues to increase, the signal delay phenomenon will become more obvious, the system loss and heat will also increase, and the system stability will gradually deteriorate. The low dielectric constant can reduce the interaction coupling loss between the material and the electrode, and can increase the transmission rate of the electrical signal, and the excellent quality factor can reduce the system loss and improve the frequency selection characteristics of the material. Considering factors such as environmental friendliness and low cos...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/16C04B35/22C04B35/622
CPCC04B35/16C04B35/22C04B35/622C04B2235/3208C04B2235/3213C04B2235/3215C04B2235/3418C04B2235/656C04B2235/6567C04B2235/602C04B2235/6583
Inventor 雷文杜康吕文中付明宋小强王飞
Owner WENZHOU ADVANCED MFG TECH INST OF HUAZHONG UNIV OF SCI & TECH
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