Chemical mechanical polishing solution

Abstract

The invention provides a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises grinding particles, a catalyst, a stabilizer, a corrosion inhibitor containing an adenine organic acid structure, an oxidizing agent, water and a pH regulator. The metal tungsten and silicon oxide can be polished at the same time, the high polishing rate of the tungsten metal is kept, the medium polishing rate of the silicon oxide is kept, static corrosion of the tungsten metal is efficiently inhibited, and the surface condition of the polished metal is improved.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid. Background technique [0002] A modern semiconductor integrated circuit is a collection of millions of tiny components on a substrate, and these components form an interconnection structure through multilayer interconnects to perform corresponding functions. For example, a typical multilayer interconnect structure includes a first metal layer, a dielectric layer, and a second or more metal layers. Each layer structure is prepared by techniques such as physical vapor deposition (PVD), chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD), and then new layers are formed on top of it. As layers of material are deposited and removed, the uppermost surface of the wafer becomes uneven. These unevenness may lead to various defects of the product, so the planarization technology of the conductive layer and the insulating dielectric layer becomes very important. ...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the technical defect that the chemical mechanical polishing fluid in the prior art cannot simultaneously maintain a high polishing rate for tungsten metal, maintain a medium polishing rate for silicon oxide, and efficiently inhibit the static corrosion of tungsten metal, the present invention provides a Chemical mechanical polishing fluid, including: abrasive particles, catalysts, stabilizers, corrosion inhibitors containing adenine organic acid structures, oxidizing agents, water and pH regulators

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