A kind of manufacturing device of Gan single crystal

Abstract

The invention relates to the technical field of GaN single crystal preparation, and discloses a GaN single crystal manufacturing device, including a reaction tube made of quartz, a connecting flange and a separating flange. A high-temperature electric furnace is provided, the quartz reaction tube is provided with a quartz-made inlet tube, a quartz-made gas pipe, a quartz-made inner container, a quartz-made outer container, a quartz-made Ga groove, a quartz-made spiral reaction tube, a quartz-made flange connection tube, The stepped outer frame made of quartz, the inner nozzle and the middle nozzle, and the flange of the inner container made of quartz are sandwiched between the two flanges connecting the flanges. The GaN single crystal manufacturing device uses HVPE method and MOCVD method to control the growth of GaN single crystal crystal in the same device, which can effectively avoid the stress caused by the lattice constant and thermal expansion number, which will cause the gallium nitride crystal to grow thick or cool. cracking, and make the grown gallium nitride easy to peel off from the sapphire when the temperature is lowered, effectively reducing the manufacturing cost of the product.

Description

Technical field [0001] The present invention relates to the related art of GaN monocycardia, in particular, a manufacturing apparatus for GaN single crystallization. Background technique [0002] GaN is a typical representative of the third-generation wide-to-semiconductor, has been widely used in semiconductor lighting, microwave power devices, and power electronic devices, showing huge application prospects. The most ideal substrate for gallium nitride growth is naturally a gallium nitride single crystal material, such homogeneous epitaxial (i.e., the same material is the same material) can greatly improve the crystal mass of the epitaxial film, reduce the dislocation density Increase the service life of the device, improve the luminous efficiency, and improve the operating current density of the device. However, the gallium nitride single crystal growth is difficult, and the price is expensive, and the large-scale homogeneous epitaxial growth is still not possible. Therefore, ...

AI Technical Summary

Problems solved by technology

[0006] Aiming at the deficiencies of the prior art, the present invention provides a GaN single crystal manufacturing device, which solves the problem that the quality improvement and large diameter of the GaN substrate cannot be widely implemented and used

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