Trench mosfet and manufacturing method of the same
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- EXCELLIANCE MOS
- Publication Date
- 2021-06-25
Smart Images
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Abstract
Description
technical field
[0001] The invention relates to a power semiconductor device, in particular to a trench type metal oxide semiconductor field effect transistor element and a manufacturing method thereof. Background technique
[0002] Among power semiconductor devices, power semiconductor devices vertically arranged in trenches have become one of the focuses of development in various fields because they can greatly increase unit density.
[0003] figure 1 It is a schematic diagram of a known trench metal oxide semiconductor field effect transistor device. exist figure 1 In the epitaxial layer 102 on the substrate 100, there are a source region 104 and a body region 106, while a trench gate 108 is disposed in the epitaxial layer 102, and an inner layer dielectric layer (ILD) 110 covers the epitaxial layer 102 and trenched gate 108 . In addition, there is a gate oxide layer 112 on the surface of the trench gate 108 .
[0004] figure 2 is along figure 1 The doping concent...