Magnetoresistive element and semiconductor device
A magneto-resistance element and multi-layer structure technology, applied in the field of magneto-resistance elements, can solve problems such as increasing capacity and reducing power consumption
Pending Publication Date: 2021-06-25
SONY SEMICON SOLUTIONS CORP
View PDF2 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
With its high-speed operation and high reliability, MRAM is expected to expand to code storage and working memory in the future; however, in practice, this is problematic in terms of reducing power consumption and increasing capacity
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0064] 2. Embodiment 1 (Magnetoresistive element according to the first aspect of the present disclosure)
Embodiment 2
[0065] 3. Embodiment 2 (modification of embodiment 1)
Embodiment 3
[0066] 4. Embodiment 3 (Magnetoresistive elements according to the second aspect and the third aspect of the present disclosure)
[0067] 5. Embodiment 4 (modification of embodiment 1 to embodiment 3)
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
A magnetoresistive element according to the present disclosure comprises a multilayer structure 40 that is composed of at least a magnetization fixed layer, an intermediate layer and a storage layer; a first side wall 51 formed on a lateral wall of the multilayer structure 40; a second side wall 52 formed on the first side wall 51. The first side wall 51 is formed from an insulating material such as SiN or AlOx, which prevents entrance of hydrogen; and the second side wall 52 is formed from a hydrogen storage material such as titanium.
Description
technical field [0001] The present disclosure relates to a magnetoresistive element, and a semiconductor device provided with the magnetoresistive element. Background technique [0002] In Magnetic Random Access Memory (MRAM), data is stored according to the magnetization orientation of the magnetic material; thus, MRAM allows fast and essentially unlimited rewriting (10 15 times or more), and has been used in fields such as industrial automation and aerospace. With its high-speed operation and high reliability, MRAM is expected to expand to code storage and working memory in the future; however, in practice, this is problematic in terms of reducing power consumption and increasing capacity. These problems are all basic problems derived from the MRAM recording principle (that is, the method of using the current magnetic field generated by wiring to perform magnetization reversal). As an example of a method of solving this problem, a recording method that does not depend on...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/10H01L21/8239H01L27/105H10N50/10H10N50/80
CPCH10B61/22H10N50/85H10N50/10G01R33/093G11C11/161H10N50/80
Inventor 末光克巳植木诚盛一正成
Owner SONY SEMICON SOLUTIONS CORP