Nonlinear slit optical waveguide and preparation method and application thereof
A slit waveguide and nonlinear technology, applied in the field of nonlinear slit optical waveguide and its preparation, can solve the problem of unsatisfactory nonlinear effect of slit waveguide, etc., and achieve stable nonlinear enhancement effect, quality and stability, increase Effects of stability and flexibility
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[0041] On the other hand, the embodiment of the present invention also provides a preparation method of the above nonlinear slit optical waveguide. The preparation method of the nonlinear slit optical waveguide comprises the following steps:
[0042] S01: Provide the slit optical waveguide body;
[0043] S02: Form a solution containing a nonlinear enhancement material for light passage on the surface of a single crystal silicon layer provided with a slit waveguide to form a nonlinear enhancement layer, and make the nonlinear enhancement layer fill the slit of the slot waveguide and cover the surface of the slot waveguide.
[0044] In this way, the method for preparing a nonlinear slit optical waveguide according to the embodiment of the present invention directly forms a film of the solution of the nonlinear enhancement material used for light passage on the surface provided with the slit waveguide, so that the formed nonlinear enhancement layer can cover the slit waveguide ...
Embodiment 1- Embodiment 14
[0056] Embodiments 1 to 14 respectively provide a slot waveguide and a preparation method thereof. The slot waveguide structure in embodiment 1-embodiment 14 is as follows figure 1 with figure 2 As shown, the silicon base layer 10, the silicon oxide layer 20 and the single crystal silicon layer 30 are stacked in sequence, and the silicon base layer 10, the silicon oxide layer 20 and the single crystal silicon layer 30 form a slot waveguide body with a sandwich structure, wherein the single The crystalline silicon layer 30 includes a silicon waveguide 31 and a silicon waveguide 32 arranged in parallel, and a slot waveguide 40 is formed between the silicon waveguide 31 and the silicon waveguide 32 . The slot waveguide also includes a nonlinear enhancement layer 50, which covers the surface of the slot waveguide 40 and fills in the slot. Among them, the thickness of the silicon base layer 10 is 700 μm; the thickness of the silicon oxide layer 20 is 2 μm; the thickness h1 of th...
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