IGBT layout structure

Abstract

The invention discloses an IGBT layout structure. The IGBT layout structure comprises a cellular area and a terminal metal ring positioned on the outer circle of the cellular area, wherein the cellular area is provided with emitter metal, an emitter pressure welding point electrically connected with the emitter metal, gate metal and a gate pressure welding point electrically connected with the gate metal; the terminal metal ring is also provided with at least one collector electrode pressure welding point; and non-collector pressure welding spot areas on the terminal metal ring are covered by a passivation layer. By adopting the IGBT layout structure provided by the invention, the parameters of an IGBT chip can be tested under the condition that the back surface of the IGBT chip does not need to be pressurized, and requirements on a probe station of chip test equipment is reduced.

Description

technical field [0001] The invention relates to the field of power components, in particular to an IGBT layout structure. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor), Insulated Gate Bipolar Transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), with MOSFET The advantages of high input impedance and low conduction voltage drop of BJT. The IGBT device has three electrodes, which are the collector C (Collector), the gate G (Gate), and the emitter E (Emmiter). IGBT, like many other power devices, in order to be able to withstand high enough voltage per unit area Blocking the voltage, and being able to switch as much current as possible, the device is generally designed as a vertical structure, that is, the collector C is located on the back of the chip, and the gate G and emitter E are located on the front of the chip. The schematic di...

AI Technical Summary

Problems solved by technology

The IGBT device has three electrodes, which are the collector C (Collector), the gate G (Gate), and the emitter E (Emmiter). IGBT, like many other power devices, in order to be able to withstand high enough voltage per unit area Blocking the voltage and being able to switch as much current as possible, the device is generally designed as a vertical structure, that is, the collector C is located on the back of the chip, and the gate G and emitter E are located on the front of the chip. The schematic diagram of the conventional IGBT layout design is as follows figure 1 As shown, when performing chip-level testing, it is necessary to press the electrode on the back of the chip, which is impossible for many probe stations without tray pressurization capabilities.

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