A vertical cavity surface emitting laser array and its manufacturing method

Abstract

Embodiments of the present invention provide a vertical cavity surface emitting laser array and a preparation method thereof, which relate to the field of laser technology. The vertical cavity surface emitting laser array includes a plurality of vertical cavity surface emitting lasers. The preparation method includes: forming a first epitaxial structure; etching and forming a plurality of light-emitting holes on a side of the first epitaxial structure away from the substrate; forming a plurality of light-emitting holes on a side of the first epitaxial structure away from the substrate The second epitaxial structure of the hole. Embodiments of the present invention provide a vertical cavity surface emitting laser array and a preparation method thereof, so as not to form a mesa structure, so that adjacent vertical cavity surface emitting lasers can be connected continuously, reducing the number of adjacent vertical cavity surface emitting lasers. The distance between them increases the arrangement density of the vertical cavity surface emitting lasers in the vertical cavity surface emitting laser array.

Description

technical field [0001] The invention relates to laser technology, in particular to a vertical cavity surface emitting laser array and a preparation method thereof. Background technique [0002] At present, in the application scenarios of many smart devices such as 3D sensing (mobile phone, payment, security, etc.), vehicle sensing, and medical treatment, there is a huge market demand for vertical cavity surface emitting laser arrays, and its device density And size miniaturization also put forward higher requirements. In the existing VCSEL array manufacturing, in order to increase the device density, it is usually achieved by increasing the number of light-emitting points and reducing the spacing. However, due to the limitation of the current semiconductor manufacturing process level, the gap between two adjacent light-emitting units There is still some difficulty in further reducing the width of the track. For the existing arrangement form, the distance between the edges ...

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Problems solved by technology

If it is expected to further reduce the pitch of the light-emitting units, if the width of the channel is directly reduced, since the limit of the photolithography process and dry etching process has been approached, the consistency of the channel morphology of different light-emitting points generated can no longer be achieved. ensure

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