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Compact opto-electric probe

A photodetector and optoelectronic technology, applied in the field of optical and electrical interface systems, can solve problems such as difficult mixing of optical and electrical wafer wafer level testing

Pending Publication Date: 2021-07-16
OPENLIGHT PHOTONICS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Wafer-level testing of hybrid optical and electrical wafers is difficult due to the larger size of test equipment and the compact size of modern high-speed optoelectronic devices

Method used

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  • Compact opto-electric probe
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  • Compact opto-electric probe

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0045] Example 1. A photodetector for interfacing with an optoelectronic device, the photodetector comprising: an electrical layer having electrical paths, at least some of which are connected to electrical terminals configured to interface with the optoelectronic an electrical component of the device is interfaced, the electrical path avoiding the optical path formed in the electrical layer; and an optical interface is used to interface with the optical component of the optoelectronic device, the optical interface is arranged to pass through the optical path formed in the electrical layer and Optical components for optical communication.

example 2

[0046] Example 2. A photodetector according to example 1 comprising a flexible optical fiber to allow positioning of the photodetector into an operative position in which the electrical terminals are in electrical contact with the electrical contacts of the optoelectronic device and the optical interface is in contact with Optical components are optically aligned.

example 3

[0047] Example 3. The photodetector according to any one of examples 1 or 2, wherein the electrical layer comprises a film comprising electrical paths, and wherein the electrical terminals extend from the film to corresponding electrical contacts of the optoelectronic device.

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Abstract

Embodiments of the present disclosure relate to a compact opto-electric probe. Described are various configurations for performing efficient optical and electrical testing of an opto-electrical device using a compact opto-electrical probe. The compact opto-electrical probe can include electrical contacts arranged for a given electrical contact layout of the opto-electrical device, and optical interface with a window in a probe core that transmits light from the opto-electrical device. An adjustable optical coupler of the probe can be mechanically positioned to receive light from the device's emitter to perform simultaneous optical and electrical analysis of the device.

Description

technical field [0001] The present disclosure relates generally to electrical circuit interfaces, and more particularly to optical and electrical interface systems. Background technique [0002] In semiconductor manufacturing, wafer testing of semiconductor devices is performed prior to singulation of the wafer into a plurality of die (eg, dicing or separation into chips). The test equipment may interface with the wafer using a wafer prober that interacts with the wafer using test patterns to test wafer components (eg, various circuits on the wafer). Some wafers may include optical components (eg, light emitters, photonic circuits) and electrical components that are designed to work simultaneously in production (eg, after singulation and integration into a product). Wafer-level testing of hybrid optical and electrical wafers is difficult due to the larger size of test equipment and the compact size of modern high-speed optoelectronic devices. Contents of the invention ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/28G01R31/311
CPCG01R31/2887G01R31/311G01R1/071G01R31/2656G01R1/06733G01R1/06755G01R31/2889G01R1/067G01R31/308G01R31/318511
Inventor M·皮尔斯A·拉马斯瓦米B·戈麦斯
Owner OPENLIGHT PHOTONICS INC
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