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Mixed streamline windward finite volume finite part method and model numerical discretization system

A technology with limited volume and streamlines facing the wind, applied in the direction of electrical digital data processing, special data processing applications, instruments, etc., can solve the problems of poor edge computing accuracy, achieve good convergence, solve the problem of poor edge computing accuracy, space network The effect of relaxed quality requirements

Pending Publication Date: 2021-07-16
HANGZHOU DIANZI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

According to the method of the present invention and the numerical discrete method, the semiconductor electrical characteristics and electrothermal coupling are simulated and verified. Compared with the FBSG method, the present invention has more relaxed requirements on the quality of the spatial grid and better convergence; compared with the SUPG method, the present invention It solves the problem of poor edge calculation accuracy in solving multidimensional problems, and has better convergence; compared with the traditional control volume finite element method, the present invention is more flexible in the optimization of the windward function

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  • Mixed streamline windward finite volume finite part method and model numerical discretization system
  • Mixed streamline windward finite volume finite part method and model numerical discretization system
  • Mixed streamline windward finite volume finite part method and model numerical discretization system

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Embodiment 1

[0077] figure 1 is the flow chart of the numerical processing of the drift-diffusion model, Figure 9 It is a system block diagram, and a numerical scheme is proposed based on the mixed streamline upwind finite volume finite element method proposed by the present invention. The element method (SU-FVFEM) solves the electron and hole current continuity equation, and introduces the Newton-Raphson (N-R) process to improve the convergence of the numerical calculation, so as to realize the numerical solution of the drift diffusion model. The specific steps are as follows:

[0078] The initial simulation setting module is used for initial simulation settings: discretization of geometric model space, various parameters and storage initialization;

[0079] Poisson equation solution module: use finite element algorithm combined with Newton-Raphson process to solve Poisson equation to obtain potential distribution;

[0080] Electron and hole current continuity equation solving module:...

Embodiment 2

[0142] refer to Figure 8 , the invention is used for electrothermal coupling simulation of semiconductors. In this numerical scheme, SU-FVFEM, N-R (FEM) and finite element time domain (FETD) methods are used to discretize the current continuity equation, Poisson equation and heat conduction equation respectively, and the coupling path of the electrothermal coupling process includes direct coupling (self-heating effect ) and indirect coupling (nonlinear material parameters). The main steps are as follows:

[0143] Use SU-FVFEM and N-R(FEM) to solve the drift diffusion model, output potential distribution and carrier concentration distribution;

[0144] Based on the obtained potential and carrier concentration distribution, the internal power density distribution of the device is obtained, and the nonlinear material parameters are updated;

[0145] Solve the heat conduction equation with the obtained power as input, and output the temperature distribution;

[0146] Based on...

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Abstract

The invention discloses a mixed streamline windward finite volume finite part method for a semiconductor continuity equation and a model numerical discrete system. The invention discloses a mixed streamline windward finite volume finite part method. The method comprises the following steps: spatial discretization of a geometric model; constructing a control volume unit; calculating the internal current density of the grid by using the edge current density and vector base interpolation; constructing a unit matrix equation; and constructing a system matrix equation. The method can be well applied to discretization of a current continuity equation in a drift diffusion model in a semiconductor device, has a promotion effect on analog simulation development of the semiconductor device, solves the problem of poor edge calculation precision in multi-dimensional problem solving in numerical modeling in the field of solid electronics compared with a streamline windward Petrov Galerkin method, and has the advantages of being simple in structure and convenient to operate. The convergence is better; compared with an FBSG method, the method has the advantages that the requirement on the quality of a space grid is looser, and the convergence is better; compared with a traditional volume finite part control method, the method is more flexible in the aspect of optimization of the windward function.

Description

technical field [0001] The invention belongs to the field of semiconductor simulation technology, and relates to the discretization of the current continuity equation in the drift diffusion model in semiconductor devices, in particular to a mixed streamline upwind finite volume finite element method for the semiconductor continuity equation and a method based on the mixed streamline upwind Numerical systems for discrete drift-diffusion models for the finite volume finite element method. Background technique [0002] Numerical modeling is a practical computer-aided design tool for the design and optimization of semiconductor devices for analog and digital applications. In the field of solid-state electronics, the drift-diffusion (DD) model is the most commonly used mathematical physics model. The drift-diffusion model is based on a drift-diffusion diagram coupled with the electron and hole current continuity equations and the Poisson equation. However, the mixed nature of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/373G06F30/23
CPCG06F30/373G06F30/23
Inventor 王大伟朱家和张鹏赵文生王晶
Owner HANGZHOU DIANZI UNIV