Preferred structure of film bulk acoustic resonator with high quality factor

A thin-film bulk acoustic wave, high quality factor technology, applied in impedance networks, electrical components, etc., can solve the problems of resonator quality factor damage, acoustic wave energy leakage, etc., and achieve excellent high quality factor, high Q value, and improved quality factor. Effect

Active Publication Date: 2021-07-16
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, part of the acoustic energy in this technical solution will still leak to the external area through the air bridge structure, which will still greatly damage the quality factor of the resonator

Method used

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  • Preferred structure of film bulk acoustic resonator with high quality factor
  • Preferred structure of film bulk acoustic resonator with high quality factor
  • Preferred structure of film bulk acoustic resonator with high quality factor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Example 1. combine Figure 2A and Figure 2B, the basic structure of a thin film bulk acoustic resonator with a high quality factor proposed by the present invention, which includes a substrate 1 with a groove 2 on the upper surface, a bottom electrode layer 3 above the substrate 1, a piezoelectric layer 4, A top electrode layer 5 with an air bridge structure 6, wherein the air bridge structure 6 is provided with an acoustic rebound structure 7 that can rebound the transverse sound wave and improve the quality factor of the film bulk acoustic resonator; The boundary in one direction of the bridge structure 6 is located within the groove 2, and the boundary in the other direction extends beyond the boundary of the groove 2; the acoustic rebound structure 7 is in close contact with the piezoelectric layer 4, forming The acoustic impedance does not match the interface; the material of the acoustic rebound structure 7 is a film medium; wherein, the acoustic rebound struct...

Embodiment 2

[0032] Example 2. combine Figure 3A and Figure 3B , a preferred structure of a thin film bulk acoustic resonator with a high quality factor proposed by the present invention, which includes a substrate 1 with a groove 2 on the upper surface, a bottom electrode layer 3 above the substrate 1, and a piezoelectric layer 4 , also includes a top electrode layer 5 with a special-shaped air bridge structure 10, and the special-shaped air bridge structure 10 is provided with an acoustic rebound structure 7 that can rebound the transverse sound wave and improve the quality factor of the film bulk acoustic resonator The boundary of one direction of the special-shaped air bridge structure 10 is located within the groove 2, and the boundary of the other direction extends beyond the boundary of the groove 2; the acoustic rebound structure 7 is in close contact with the piezoelectric layer 4, An acoustic impedance mismatch interface in the horizontal propagation direction is formed; the ...

Embodiment 3

[0048] Example 3. Taking a specific 2.6GHz thin film bulk acoustic resonator as an example, the above-mentioned structure is verified and analyzed through simulation design results to analyze the actual effect of the present invention on improving the Q value of the thin film bulk acoustic resonator.

[0049] Figure 4 It is a schematic diagram of the performance test parameters of the film bulk acoustic resonator without the air bridge structure. Figure 5 It is a schematic diagram of performance test parameters of a film bulk acoustic resonator with an air bridge structure. Figure 6 It is a schematic diagram of the performance test parameters of the basic structure of a high quality factor film bulk acoustic resonator proposed by the present invention. Figure 7 It is a schematic diagram of performance test parameters of a preferred structure of a high-quality factor thin-film bulk acoustic resonator proposed by the present invention. exist Figure 4 In the simulation d...

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PUM

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Abstract

The invention relates to a preferable structure of a film bulk acoustic resonator with a high quality factor, and the structure comprises a substrate with a groove on the upper surface, a bottom electrode layer positioned above the substrate and a piezoelectric layer, and is characterized in that the structure also comprises a top electrode layer with a special-shaped air bridge structure; the special-shaped air bridge structure is internally provided with a sound springback structure which can play a role in springback of transverse sound waves and improve the quality factor of the film bulk acoustic wave resonator. The acoustic springback structure is made of a SiC and perovskite combined thin film medium or a SiN and perovskite combined thin film medium; the acoustic springback structure is a polyhedron opposite to a bridge cavity of the special-shaped air bridge structure and clings to the upper portion of the piezoelectric layer in a horizontal mode, and an air gap is reserved between the upper portion of the acoustic springback structure and a bridge cavity suspension structure of the special-shaped air bridge structure; the left side face and the right side face of the sound rebound structure are tightly attached to the grooves in the adjacent inner side faces of the bridge cavity supporting structure of the special-shaped air bridge structure respectively. The quality factor of the film bulk acoustic resonator can be remarkably improved.

Description

technical field [0001] The invention relates to a thin film bulk acoustic wave device, in particular to a preferred structure of a high quality factor thin film bulk acoustic wave resonator. Background technique [0002] With the development of wireless communication technology and smart phones, the RF front-end has higher and higher requirements on the performance indicators and integration of components. RF front-end filters, duplexers, and multiplexers based on thin film bulk acoustic wave devices have been widely used in smartphones, communication terminals, and In the communication base station, it will be applied in the communication equipment of the Internet of Vehicles, industrial control and other Internet of Things terminals in the future. In addition, oscillators based on thin film bulk acoustic wave devices are of great application value in high-speed serial data devices such as SATA hard drives, USB3.0 standard PC peripherals, C-type interfaces, and optical t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/17H03H9/02H03H9/13
CPCH03H9/173H03H9/174H03H9/02086H03H9/02H03H9/131H03H2009/02173
Inventor 赵洪元黄旼
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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