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Solid-state reflective surface acoustic wave resonator and preparation method thereof

A surface acoustic wave and reflection-type technology, applied in the direction of impedance network, electrical components, etc., can solve the problems of difficult to achieve wide-band filtering, poor RF performance of resonators, and large influence of resonance frequency, achieving excellent performance and solving RF performance changes. Poor, high-strength effects

Pending Publication Date: 2021-07-23
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above existing problems or deficiencies, in order to solve the technical problems that the existing solid-state reflective surface acoustic wave resonator has leakage current, which leads to the deterioration of the radio frequency performance of the resonator; it has a great influence on the resonance frequency, and it is difficult to achieve broadband filtering

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  • Solid-state reflective surface acoustic wave resonator and preparation method thereof
  • Solid-state reflective surface acoustic wave resonator and preparation method thereof
  • Solid-state reflective surface acoustic wave resonator and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0027] The preparation method of the solid-state reflective surface acoustic wave resonator of this embodiment includes the following steps:

[0028] The reflective layer of this embodiment is a 3-cycle laminated structure in which one layer of low acoustic impedance reflection layer is laminated on one layer of high acoustic impedance reflection layer. The porous structure layer is one layer and is arranged on the top (on the side of the upper electrode. In a reflection layer loop for the above), such as figure 1 structure shown.

[0029] Step 1. First grow a low acoustic impedance reflective layer under the injection surface of the piezoelectric material, and then set a layer of porous structure under the low acoustic impedance reflective layer; the setting method is an ion etching method.

[0030] Then grow a high acoustic impedance reflective layer on the porous structure layer; then continue to grow the rest of the reflective layer cycles, and finally bond the substrate ...

Embodiment 2

[0036] The preparation method of the solid-state reflective surface acoustic wave resonator of this embodiment is the same as that of Embodiment 1: the difference is that the porous structure layer is one layer, which is arranged in the middle reflective layer circulation, such as figure 2 structure shown.

Embodiment 3

[0038] The structure and preparation method of the novel solid-state reflective surface acoustic wave resonator of this embodiment include the following steps:

[0039] The reflective layer of this embodiment is a 3-cycle laminated structure in which one layer of low acoustic impedance reflection layer is laminated on one layer of high acoustic impedance reflection layer, and the porous structure layer is 3 layers, which are arranged in each reflection layer cycle, such as image 3 structure shown.

[0040] Step 1, first grow a layer of low acoustic impedance reflective layer under the injection surface of the piezoelectric material, then set a layer of porous structure layer under the low acoustic impedance reflective layer, and then grow a high acoustic impedance reflective layer under the porous structure layer;

[0041] Then, according to the low acoustic impedance reflection layer, the porous structure layer and the high acoustic impedance reflection layer as a cycle stru...

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Abstract

The invention belongs to the field of processing of single crystal thin film devices and surface acoustic wave devices, and particularly relates to a solid-state reflection type surface acoustic wave resonator and a preparation method thereof. According to the invention, at least one porous structure layer is arranged between at least one low-acoustic-impedance reflecting layer and at least one high-acoustic-impedance reflecting layer of the reflecting layers in a circulating manner, electrons are loaded through the porous structure layers, leakage current between the reflecting layers and leakage current flowing to the substrate are reduced, and the effect of effectively reflecting resonance energy can be achieved. And finally, through the design of the reflecting layer and the porous structure layer between the reflecting layer and the porous structure layer, the solid-state reflecting surface acoustic wave resonator with high strength and excellent performance is obtained. Moreover, the prepared surface acoustic wave resonator can effectively solve the technical problems that the radio frequency performance of a device becomes poor due to leakage current, and broadband filtering is difficult to realize.

Description

technical field [0001] The invention belongs to the field of single crystal thin film device processing and surface acoustic wave devices, and in particular relates to a solid reflection surface acoustic wave resonator and a preparation method thereof. Background technique [0002] Surface acoustic wave resonators have been widely used in the field of wireless communication due to their small size and high quality factor (Q value). The basic working principle of the surface acoustic wave resonator is: the transmitting transducer converts the electrical signal into a surface acoustic wave signal through the inverse piezoelectric effect, and the surface acoustic wave signal propagates along the surface of the piezoelectric film to the periodic reflection grating, satisfying the Bragg reflection condition The surface acoustic wave signal of a specific wavelength can be reflected back by the reflection grid, and the reflected acoustic signal and the acoustic signal emitted at th...

Claims

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Application Information

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IPC IPC(8): H03H9/25H03H9/02
CPCH03H9/25H03H9/02
Inventor 帅垚陶冠平吴传贵罗文博
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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