Manufacturing method of OLED driving integrated circuit flash memory equipment

Abstract

The invention discloses a manufacturing method of OLED driving integrated circuit flash memory equipment, and the method comprises the following steps: 1) forming an element isolation pattern on an active region of a semiconductor substrate, forming a pattern of a tunnel oxide film on the active region, and forming a polycrystalline silicon pattern with a side edge and an upper edge; 2) forming a metastable polycrystalline silicon growth layer on the side wall of the tunnel oxide film and the upper side connected with the side wall; 3) forming an ONO film covering the metastable-state polycrystalline silicon growth layer, and forming the metastable-state polycrystalline silicon growth layer; 4) forming a control gate on the ONO film, and respectively forming metastable state polycrystalline silicon growth layers on the side wall and the upper side of the metastable state polycrystalline silicon growth layer. According to the invention, the gate coupling coefficient influencing the characteristics of the flash memory device is improved, the contact area between the tunnel oxide film and the floating gate is reduced, the contact area between the ONO film and the floating gate is improved, and the performance of the flash memory element is improved.

Description

technical field [0001] The invention relates to a manufacturing method, in particular to a manufacturing method of an OLED driving integrated circuit flash memory device. Background technique [0002] In recent years, with the development of semiconductor manufacturing technology, the engineering technology of data storage devices has also developed rapidly, and people can store a large amount of data in a limited area. Data storage units manufactured through semiconductor manufacturing techniques are classified into volatile memory devices and nonvolatile memory devices. Volatile memory devices have fast data access / access, but the data disappears when the power is turned off. Rather than a volatile storage device, the data stored in it will not disappear even if the power is unplugged. For example, dynamic random access memory (DRAM) has the advantage of being able to retain information for a long period of time, even if the power is removed, the data is still stored. ...

AI Technical Summary

Problems solved by technology

[0006] Typically, in non-volatile memory technologies such as flash memory, the thickness of the oxide-nitride-oxide film is reduced as much as possible to the minimum usable value where this thickness ratio can affect the floating The value of the charge retention capability in the gate is much smaller, and at the same time, since the gate coupling coefficient increases the overlap between the isolation structure and the floating gate, in order to determine the gap between the floating gates, the isolation structure The size of the flash device will exceed the actual need, and the integration of the flash memory device will be reduced in the case of increasing the space occupied by the isolation structure

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