Polishing slurry composition for sti process
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- K C TECH
- Publication Date
- 2021-07-30
- Estimated Expiration
- Not applicable Β· inactive patent
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Abstract
Description
technical field
[0001] The present invention relates to a polishing slurry composition for an STI process capable of reducing dishing while having a high polishing rate. Background technique
[0002] As semiconductor elements become more diverse and highly integrated, a technology capable of forming fine patterns is used, which makes the surface structure of semiconductor elements more and more complicated, and the step difference of the surface film becomes larger and larger. In the process of manufacturing semiconductor elements, chemical mechanical polishing (CMP, chemical mechanical polishing) planarization technology is used to remove the step difference formed on a specific film of a substrate. Insulation for shallow trench isolation (STI) that is used as a process for removing excessively formed insulating films for interlayer insulation and insulation between interlayer insulating films (interlayer dielectric, ILD) and chips (chips). It is used in the planarization ...